外电场下 β-(AlxGa1 - x )2O3 /Ga2O3 对称三量子阱中的子带间跃迁

doi:10.3969/j.issn.1007-5461.2026.04.013

量子电子学报 ›› 2026, Vol. 43 ›› Issue (4): 641-648.doi: 10.3969/j.issn.1007-5461.2026.04.013

外电场下 β-(AlxGa1 - x )2O3 /Ga2O3 对称三量子阱中的子带间跃迁

赵亚坤 , 哈斯花*

内蒙古工业大学理学院物理学系, 内蒙古呼和浩特 010051

收稿日期:2024-10-12 修回日期:2025-01-24 出版日期:2026-07-28 发布日期:2026-07-27
通讯作者: E-mail: hasihua_121@163.com E-mail:E-mail: hasihua_121@163.com
作者简介:赵亚坤 ( 1998 - ), 河北邢台人, 研究生, 主要从事低维半导体方面的研究。E-mail: 1690847677@qq.com
基金资助:
国家自然科学基金 (12164031, 62364014), 内蒙古自然科学基金 (2025MS01031), 内蒙古自治区直属高校基本科研业务费项目 (JY20240041)

Intersubband transitions in β⁃(AlxGa1 - x )2O3 /Ga2O3 symmetric triple quantum wells under external electric fields

ZHAO Yakun, HA Sihua *

Department of Physics, College of Science, Inner Mongolia University of Technology, Hohhot 010051, China

Received:2024-10-12 Revised:2025-01-24 Published:2026-07-28 Online:2026-07-27

摘要/Abstract

摘要： 本文构建了周期性 β -(AlxGa1 - x )2O3 /Ga2O3 三量子阱模型, 采用有限差分法理论探讨了外电场对(AlxGa1 - x )2O3 /Ga2O3对称三量子阱结构中子带间跃迁的影响, 同时计算了电子本征态及线性子带间吸收光谱。结果表明: 当外电场为0时, 电子波函数主要局域于中间阱, 吸收系数峰值对应于3‒1跃迁。随着外电场增强, 吸收系数峰值逐渐减小。当施加强度为100 kV/cm的外电场时, 势阱发生倾斜, 左阱中电子出现概率增加, 且能级均向高能级方向移动; 与此同时, 能级间距增大, 低能级简并度减小, 高能级简并度增加。此外, 本文还分析了铝组分及外电场强度与子带间跃迁特性的关系。

关键词: 半导体低维结构, 子带间跃迁, 有限差分法, 本征态, 对称三量子阱

Abstract: A periodic β-(AlxGa1 - x )2O3 /Ga2O3 triple quantum well model is designed in this work. And then based on the finite-difference method, the intersubband transitions in the (AlxGa1 - x )2O3 /Ga2O3 symmetric triple quantum well structure are investigated under external electric field. At the same time, the electronic eigenstates and linear intersubband absorption spectra are calculated. The results show that when the external electric field is zero, the electron wave functions are mainly localized in the middle well, and the peak absorption coefficient corresponds to the 3–1 transition. As the external electric field increases, the peak absorption coefficient decreases. When an external electric field of 100 kV/cm is applied, the potential well becomes tilted, the probability of finding electrons in the left well increases, and all the energy levels shift toward higher energies. At the same time, the energy level intervals increase, the degeneracy of the lower energy levels decreases, while that of the higher energy levels increases. Furthermore, the relationships between aluminum composition, applied electric field intensity, and intersubband transitions are analyzed.

Key words: 半导体低维结构, 子带间跃迁, 有限差分法, 本征态, 对称三量子阱

中图分类号:

O472

赵亚坤, 哈斯花 . 外电场下 β-(AlxGa1 - x )2O3 /Ga2O3 对称三量子阱中的子带间跃迁[J]. 量子电子学报, 2026, 43(4): 641-648.

ZHAO Yakun, HA Sihua . Intersubband transitions in β⁃(AlxGa1 - x )2O3 /Ga2O3 symmetric triple quantum wells under external electric fields[J]. Chinese Journal of Quantum Electronics, 2026, 43(4): 641-648.

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外电场下 β-(AlxGa1 - x )2O3 /Ga2O3 对称三量子阱中的子带间跃迁

Intersubband transitions in β⁃(AlxGa1 - x )2O3 /Ga2O3 symmetric triple quantum wells under external electric fields

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