AuGe/Au与GaAs退火处理的特性研究

量子电子学报

AuGe/Au与GaAs退火处理的特性研究

肖和平，朱迪

扬州乾照光电有限公司，江苏扬州 225101

出版日期:2018-11-28 发布日期:2018-11-14
通讯作者: 肖和平（1984-），四川泸州人，硕士，主要从事LED芯片工艺、半导体材料特性等方面的研究。 E-mail:ietgu@163.com
作者简介:肖和平（1984-），四川泸州人，硕士，主要从事LED芯片工艺、半导体材料特性等方面的研究。
基金资助:

Properties of AuGe / Au on GaAs annealing treatment

XIAO Heping, ZHU Di

Yangzhou Changelight Co. Ltd ， Yangzhou 225101, China

Published:2018-11-28 Online:2018-11-14
Supported by:

摘要/Abstract

摘要： AuGe合金具有接触电阻低与GaAs衬底粘附性好等特点，广泛应用于M/S （金属/半导体）器件中以形成欧姆接触。在GaAs表面蒸镀AuGe/Au材料，经不同温度快速热退火后，使用扫描电子显微镜（SEM）、X射线光电子能谱分析仪（XPS）和X射线衍射仪对样品欧姆接触的界面特性进行了分析。随着退火温度的升高，接触电阻呈现V型趋势，AuGe部分分解，Au、Ge向GaAs界面扩散，Ga、As向金属层扩散，金属表层出现暗灰色孔状物，主要成分为AuGa、AuGaAs等，此外Ge、Ga的结合能增加0.3~0.6 eV，Ga3+、Ge4+高价态的占比增加，Ge含量为10%的材料作为n-GaAs接触电极，退火温度在380~420 ℃ 之间可使其形成良好的欧姆接触。

关键词: AuGe合金, GaAs, 退火处理, 欧姆接触, 结合能

Abstract: AuGe alloy has the characteristics of low contact resistance and good adhesion to GaAs substrate. It is widely used in M / S (metal / semiconductor) devices to form ohmic contact. AuGe/Au material is deposited on GaAs surface, after rapid thermal annealing at different temperatures, the interfacial characteristics of ohmic contact of the samples are analyzed by using scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS) and X - ray diffractometer. With the increase of annealing temperature, the contact resistance shows a V-type trend. AuGe is partially decomposed. Au and Ge diffuse into the GaAs interface. Ga and As diffuse into the metal layer. The dark gray pores appear in the metal surface, and the main components are AuGa, AuGaAs etc. The bonding energy of Ge and Ga can increase 0.3 ~ 0.6 eV. The proportion of Ga3+ and Ge4+ increase, and the materials containing 10% Ge is selected as n-GaAs contact electrode. Good ohmic contact can be formed when the annealing temperature ranges from 380℃ to 420 ℃.

Key words: AuGe alloy, GaAs, annealing treatment, ohmic contact, bonding energy

中图分类号:

肖和平，朱迪. AuGe/Au与GaAs退火处理的特性研究[J]. 量子电子学报.

XIAO Heping, ZHU Di. Properties of AuGe / Au on GaAs annealing treatment[J]. Chinese Journal of Quantum Electronics.

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