边发射半导体激光器光纤耦合技术研究进展

量子电子学报 ›› 2019, Vol. 36 ›› Issue (6): 641-650.

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边发射半导体激光器光纤耦合技术研究进展

荆玉峰1,2,3,4，郑建刚1,2,3，肖凯博1,2，严雄伟1,2，蒋新颖1,2

1中国工程物理研究院激光聚变研究中心激光技术工程部，四川绵阳 621900； 2中国工程物理研究院高能激光科学与技术重点实验室，四川绵阳 621900； 3上海交通大学IFSA协同创新中心，上海 200240； 4中国工程物理研究院研究生院，北京100088 1中国工程物理研究院激光聚变研究中心激光技术工程部，四川绵阳 621900； 2中国工程物理研究院高能激光科学与技术重点实验室，四川绵阳 621900； 3上海交通大学IFSA协同创新中心，上海 200240； 4中国工程物理研究院研究生院，北京100088

出版日期:2019-11-28 发布日期:2019-11-19
通讯作者: 郑建刚（1974-），四川人，博士，副研究员，硕士生导师，主要从事高效重频固体激光器的研究。E-mail：zjg8861@163.com E-mail:E-mail：826593172@qq.com
作者简介:荆玉峰（1989-），河南人，研究生，主要从事半导体光束整形方面的研究。
基金资助:
Supported by National Natural Science Foundation of China (国家自然科学基金, U1830104), Development of Science and Technology Foundation of China Academy of Engineering Physics (中国工程物理研究院科学技术发展基金，2018A0401018）

Research progress of fiber coupled technology for side emission semiconductor laser

JING Yufeng1, 2, 3, 4, ZHENG Jiangang1, 2, 3, XIAO Kaibo1, 2, YAN Xiongwei1, 2, JIANG Xinying1, 2

1 Diversion of Laser Engineering, Laser Fusion Research Center, China Academy of Engineering Physics, Mianyang 621900, China; 2 Key Laboratory of Science and Technology on High Energy Laser, China Academy of Engineering Physics, Mianyang 621900, China; 3 Collaborative Innovation Center of IFSA, Shanghai Jiao Tong University, Shanghai 200240, China; 4 Graduate School of China Academy of Engineering Physics, Beijing 100088, China

Published:2019-11-28 Online:2019-11-19

摘要/Abstract

摘要： 为探明LOC_Os10g05490位点冷胁迫条件下的表达特性和耐冷性功能,以耐冷东乡野生稻和冷敏感水稻93-11为试验材料进行了半定量分析,结果表随着半导体材料生长工艺和封装技术等的快速发展，高功率、高亮度半导体激光器的性能不断提升，使之在工业加工、生物医疗、国防以及作为光纤和固体激光器泵浦源等方面有着重要作用。近些年来，边发射半导体的功率、光束质量的提升，使得耦合到光纤的输出功率不断提高。单管光纤耦合逐渐从毫瓦级输出发展到数十瓦输出，通过偏振、光谱、空间等合束技术，甚至达到数百瓦的输出。在叠阵或多线阵光纤耦合方面，也实现了从数十瓦级输出发展到数十千瓦级输出。从单管、线阵和叠阵三种半导体激光器出发，对半导体激光器发展现状、技术进行了调研分析，对光纤耦合半导体激光器的多种整形、合束和耦合技术进行了总结和展望。

关键词: 半导体激光器, 光束整形, 光纤耦合, 高功率

Abstract: With the rapid development of semiconductor growth technology and packaging technology, the performance of high power and high brightness semiconductor lasers has been continuously improved, which plays an important role in industrial processing, biomedical, national defense, as well as pumping source of fiber lasers and solid-state lasers. In recent years, the power and beam quality of side-emitting semiconductors have been improved, which makes the output power coupled to optical fibers continuously improve. Fiber coupled single emitter has gradually improved from milliwatt output to tens of watts output, even hundreds of watts output through space, spectrum, space combining technology. In the field of stacked array or multi-linear array fiber coupled laser, the output has also been improved from tens of watts level to tens of kilowatts level. Starting from three kinds of semiconductor lasers including single emitter, linear array and stacked array, the development status and technology of semiconductor lasers are investigated and analyzed, and the various shaping, bunching and coupling technology of fiber-coupled semiconductor lasers are also summarized and prospected.

Key words: semiconductor Laser, beam shaping, fiber coupling, high power

中图分类号:

TN248.4

荆玉峰, 郑建刚, 肖凯博, 严雄伟, 蒋新颖, . 边发射半导体激光器光纤耦合技术研究进展[J]. 量子电子学报, 2019, 36(6): 641-650.

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边发射半导体激光器光纤耦合技术研究进展

Research progress of fiber coupled technology for side emission semiconductor laser

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