CH3NH3PbI3 钙钛矿薄膜阵列光电探测器

doi:10.3969/j.issn.1007-5461.2022.05.008

摘要/Abstract

摘要： 将光电性能优异、可通过低温溶液法制备的卤化物钙钛矿制成阵列型光电探测器, 必将推动其在成像、光通信等领域中的应用。然而, 卤化物钙钛矿易被常规溶剂 (包括显影液) 溶解, 导致其与光刻工艺不兼容。自组装单分子疏水层结合光刻工艺的亲水-疏水图形基底制备方法能解决制备过程中极性溶剂与钙钛矿材料不兼容的问题, 通过简单的旋涂 (极性钙钛矿前驱体溶液仅在亲水图形区域浸润)、低温退火, 可以快速获得钙钛矿阵列。CH3NH3PbI3 薄膜阵列光电探测器具有良好的光电性能, 530 nm 光辐照下探测率为 4.7 × 10 11 Jones, 响应度为 0.055 A/W。这项工作为制备图案可控的钙钛矿薄膜阵列光电探测器提供了一种简单而有效的策略。

关键词: 薄膜光学, 卤化物钙钛矿, 光电探测器阵列, 反溶剂法, 亲水- 疏水基底, 光刻

Abstract: Halide perovskite possesses excellent photoelectric properties and can be prepared by lowtemperature solution method. Photodetector arrays made of halide perovskite are highly required in the area of imaging, optical communication and other ﬁelds. However, halide perovskite can be easily dissolved by conventional solvents (including developer), which makes it incompatible with photolithography process. Herein, a novel method based on spin coating (the polar perovskite precursor solution only inﬁltrates the hydrophilic pattern area) and low-temperature annealing has been proposed to prepare perovskite arrays, which can solve the problem of incompatibility between polar solvents and perovskite materials. The fabricated photodetector based on CH3NH3PbI3 thin ﬁlm arrays exhibits good photoelectric performance, with a high detectivity of 4.7 × 10 11 Jones and the responsivity of 0.055 A/W under 530 nm light irradiation. This work provides a simple and eﬀective strategy to prepare well-deﬁned perovskite photodetector arrays based on thin ﬁlm array.

Key words: ?lm optics, halide perovskite, photodetector arrays, anti-solvent method, hydrophilichydrophobic substrate, photolithography

中图分类号:

O484

叶雨琪, 王时茂, 单雪燕, 赵啸, 孟钢∗. CH3NH3PbI3 钙钛矿薄膜阵列光电探测器[J]. 量子电子学报, 2022, 39(5): 752-760.

YE Yuqi , , WANG Shimao , SHAN Xueyan , , ZHAO Xiao , , MENG Gang ∗. Perovskite photodetector based on CH3NH3PbI3 thin ﬁlm arrays[J]. Chinese Journal of Quantum Electronics, 2022, 39(5): 752-760.

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