单量子阱InGaN/GaN势垒高度与LED光电性能关系研究

张大庆，李国斌，陈长水

Relationship between barrier height of single quantum well InGaN/GaN and LED photoelectric performance

ZHANG Da-qing, LI Guo-bin, CHEN Chang-shui

量子电子学报 . 2014, (1): 107 -115 .