量子电子学报 ›› 2023, Vol. 40 ›› Issue (2): 238-257.doi: 10.3969/j.issn.1007-5461.2023.02.006

• “太赫兹物理、器件与应用”专辑 • 上一篇    下一篇

超快光场驱动的二氧化钒薄膜相变研究进展

王 康1,2 , 刘 一1 , 宋立伟2∗   

  1. ( 1 上海理工大学光电信息与计算机工程学院, 上海 200093; 2 中国科学院上海光学精密机械研究所强场激光物理国家重点实验室, 上海 201800 )
  • 收稿日期:2022-10-24 修回日期:2022-12-01 出版日期:2023-03-28 发布日期:2023-03-28
  • 通讯作者: E-mail: yi.liu@usst.edu.cn; slw@siom.ac.cn E-mail:E-mail: yi.liu@usst.edu.cn; slw@siom.ac.cn
  • 作者简介:王 康 ( 1996 - ), 湖北黄冈人, 研究生, 主要从事强场太赫兹及其物质调控方面的研究。 E-mail: wangkang@siom.ac.cn
  • 基金资助:
    中国科学院高层次人才引进计划, 中国科学院科研仪器设备研制项目 (YJKYYQ20200031), 上海市自然科学基金重点项目 (20JC1416000)

Research progress in phase transition of vanadium dioxide films driven by ultrafast optical field

WANG Kang 1,2 , LIU Yi 1 , SONG Liwei 2∗   

  1. ( 1 School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China; 2 State Key Laboratory of High Field Laser Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China )
  • Received:2022-10-24 Revised:2022-12-01 Published:2023-03-28 Online:2023-03-28

摘要: 二氧化钒 (VO2) 是一种典型的强关联电子材料, 当达到相变阈值时, 会可逆地从绝缘单斜相转变到金属 金红石相, 这种相变主要通过温度、光照、电场、磁场、应力等激励条件激发。相突变可在亚皮秒时间尺度内 发生, 并会伴随着光学透过率、折射率和磁化率等特性的显著变化,其中相变前后电阻率会发生 3∼5 个数量级 的变化, 这使得 VO2 在智能节能窗、光电探测、光电存储、光开关等领域有着重要的应用前景。首先介绍了 VO2 的相变机制, 主要有电子关联驱动、晶格结构驱动以及两者共同驱动, 接着重点介绍了利用超快时间分辨 技术, 尤其是太赫兹时域光谱技术, 来研究 VO2 薄膜的相变动力学过程, 最后, 介绍了基于 VO2 薄膜的太赫兹调 制器、太赫兹滤波器、太赫兹开关等领域的应用研究。

关键词: 薄膜物理学, 二氧化钒薄膜, 绝缘-金属相变, 太赫兹时域光谱, 太赫兹功能器件

Abstract: Vanadium dioxide (VO2) is an archetypal strongly correlated-electron material. When the phase transition threshold is reached, there will be a reversible transition from the insulating monoclinic phase to the metallic rutile phase for VO2. The transition can be induced mainly by thermal, optical, electrical, magnetic field, and strain. The abrupt change of VO2 phase can occur in subpicosecond time scales, along with the significant change of optical reflectivity, refractive index, magnetic susceptibility, and other physical quantities. In particular, the resistivity of VO2 will change in three to five orders of magnitude before and after the phase change, which makes VO2 has great application prospects in the fields of intelligent energy-saving windows, photoelectric detection, photoelectric storage, optical switches, and other fields. This review first describes the phase transitions mechanism of VO2, which is driven by the electron correlation or the lattice structure alone or both. Then it focuses on employing ultrafast time-resolved techniques, particularly terahertz time-domain spectroscopy techniques, to study the phase transition dynamics process of VO2 thin films. Finally, the application research of terahertz modulators, terahertz filters, terahertz switches, and other devices based on VO2 thin films are introduced.

Key words: thin ?lm physics, vanadium dioxide thin ?lm, insulator-metal transition, terahertz time-domain spectroscopy, terahertz functional device

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