Yb3+: GdGaGe2O7制备、结构及光谱性能

J4 ›› 2011, Vol. 28 ›› Issue (2): 234-240.

• 第二届全国光学青年学术论坛论文选登 • 上一篇下一篇

Yb³⁺: GdGaGe₂O₇制备、结构及光谱性能

宁凯杰^1，2 张庆礼¹ 孙敦陆¹ 殷绍唐¹

1 中科院安徽光学精密机械研究所安徽省光子器件与材料重点实验室，安徽合肥 230031；
2 中国科学院研究生院，北京，100049

发布日期:2011-03-03
通讯作者: 张庆礼（1973-），博士，研究员，博士生导师，主要从事晶体生长、结构、发光物理等研究。 E-mail:zql@aiofm.ac.cn
作者简介:宁凯杰（1984-），男，中国科学院安徽光机所博士研究生，主要从事激光材料及新型光电子材料探索与研究。E-mail: kaijie_ning@163.com。
基金资助:
国家自然科学基金 (90922003，50772112, 50872135, 50932005）和中科院知识创新项目（YYYJ-1002）

Preparation, structure and spectral properties for Yb ³⁺ :GdGaGe₂O₇

NING Kai-Jie^1，2, ZHANG Qing-Li¹, SUN Dun-Lu¹, YIN Shao-Tang¹

1 Key Laboratory of Photonic Devices and Materials, Anhui Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Hefei 230031 ，China；
2 Graduate School of Chinese Academy of Sciences，Beijing, 100049， China

Online:2011-03-03

摘要/Abstract

摘要：

采用固相法制备了10at.% Yb3+: GdGaGe2O7多晶粉体，通过X射线粉末衍射用Rietveld全谱拟合给出了其空间群为P21/c,晶格常数a、b、c和β、Gd/Yb和Ga的原子坐标为。Ge1、Ge2、O1～O7的原子坐标。通过吸收谱、激发谱、光致发光谱和Raman光谱确定Yb3+的晶场能级分裂；1003nm发光在低温8K和室温(300K)时上能级荧光寿命为0.493ms和0.774ms。在室温下测量荧光寿命变长主要由再吸收所引起。Yb3+:GdGaGe2O7的吸收和发射光谱均很宽，荧光寿命长，是潜在的全固态激光工作物质。

关键词: Yb3+: GdGaGe2O7, X射线衍射, 光致发光, 晶场能级

Abstract:

10at.%Yb3+:GdGaGe2O7 powders were prepared by the solid state reaction, and its structure was determined by the Rietveld refinement to the X-ray powder diffraction. Its space group is P21/c, lattice parameters are a, b, c, β，and the atomic coordinates of Gd/Yb and Ga，Ge1, Ge2 and O1~O7. The crystal field splitting of Yb3+ in GdGaGe2O7 are determined according to its absorption, excitation, emission and Raman spectra. The lifetime of 1003nm emission was 0.493ms at low temperature(8K) and 0.774ms at room temperature(300K), and the obtained decay-time is longer at room temperature which is caused by its re-absorption. The emission and absorption spectra of Yb3+: GdGaGe2O7 are relatively wide, the luminescence decay time is long, and it is a potential all-solid-state-laser medium.

Key words: materials, Yb3+: GdGaGe2O7, X-ray diffraction, photoluminescence, crystal field splitting

中图分类号:

O782

宁凯杰张庆礼孙敦陆殷绍唐. Yb³⁺: GdGaGe₂O₇制备、结构及光谱性能[J]. J4, 2011, 28(2): 234-240.

NING Kai-Jie, ZHANG Qing-Li, SUN Dun-Lu, YIN Shao-Tang. Preparation, structure and spectral properties for Yb ³⁺ :GdGaGe₂O₇[J]. J4, 2011, 28(2): 234-240.

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Yb³⁺: GdGaGe₂O₇制备、结构及光谱性能

Preparation, structure and spectral properties for Yb ³⁺ :GdGaGe₂O₇

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