一种新的SOI波导拉曼激光器模型及其应用

J4 ›› 2016, Vol. 33 ›› Issue (2): 162-169.

一种新的SOI波导拉曼激光器模型及其应用

陈世恩,王少昊

福州大学物理与信息工程学院微电子学系, 福建福州 350108

收稿日期:2015-03-24 修回日期:2015-03-27 出版日期:2016-03-28 发布日期:2016-03-28
通讯作者: 王少昊（1981—）福州人，副教授，博士，从事集成光子学和非线性光学的研究 E-mail:shwang@fzu.edu.cn
作者简介:陈世恩（1988—）福建人，研究生，从事硅波导拉曼放大器的理论研究。Email: chenshien0924@126.com
基金资助:
国家自然科学基金（No.61205049）和福建省自然科学基金（No. 2013J05089）

A novel Model for SOI Waveguide Raman Lasers and Its Applications

CHEN Shien, WANG Shaohao

Department of Microelectronics, Colleague of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China

Received:2015-03-24 Revised:2015-03-27 Published:2016-03-28 Online:2016-03-28

摘要/Abstract

摘要： 通过考虑腔中的自发拉曼散射，提出一种新的绝缘体上硅(SOI)波导拉曼激光器物理模型。仿真结果表明该模型能较好地描述其小信号输出特性，实现对该类激光器的快速分析、设计与优化。利用模型对基于多种SOI波导的拉曼激光器进行分析，结果表明室温下只有采用拥有较大拉曼系数，较小线性损耗和较短的有效载流子寿命的SOI波导才能使拉曼激光器达到阈值。提出采用优化SOI波导截面几何尺寸的方法来降低有效载流子寿命，进而提高整体拉曼增益。结果显示该方法可大幅提高SOI波导拉曼激光器的输出功率和能量转换效率。

关键词: 非线性光学；拉曼激光器；硅波导；集成光子学

Abstract: An improved model is proposed to describe silicon-on-insulator (SOI) waveguide Raman lasers by considering the spontaneous Raman scattering effect. Numerical results indicate that our proposed model can well describe small-signal SOI waveguide Raman lasers and estimates the laser threshold. By using physical parameters of real SOI waveguides, we analyzed SOI waveguide Raman lasers. The results indicate the key to reach the laser thresholds in room temperature is a waveguide with large Raman coefficient, low loss, and short effective free carrier lifetime. We also proposed that by optimizing the transverse geometric size, a high overall Raman gain can be achieved in SOI waveguides with small effective mode area and short effective carrier lifetime which can increase the output power and the conversion efficiency of SOI waveguide Raman lasers.

Key words: Nonlinear optics;Raman laser; Silicon waveguide; Integrated photonics

中图分类号:

TN256

陈世恩王少昊. 一种新的SOI波导拉曼激光器模型及其应用[J]. J4, 2016, 33(2): 162-169.

CHEN Shien, WANG Shaohao. A novel Model for SOI Waveguide Raman Lasers and Its Applications[J]. J4, 2016, 33(2): 162-169.

参考文献

[1]Jalali B, Ragunathan V, Dimitropoulus D, et al.Raman-based silicon photonics[J].IEEE Journal of Selected Topics Quantum Electron, 2006, 12(3):412-421 [2]Miller D.Device requirements for optical interconnects to silicon chips[J].Proceedings of the IEEE, 2009, 97(7):1166-1185 [3]Silverstone J W, Bonneau D, Ohira K, et al.On-chip quantum interference between silicon photon-pair sources[J][J].Nature Photonics, 2014, 8(2):104-108 [4]Dellolio F, Passaro V M, .Optical sensing by optimized silicon slot waveguides [J][J].Optics Express, 2007, 15(8):4977-4993 [5]Leuthold J, Koos C, Freude W.Nonlinear silicon photonics[J].[J].Nature Photonics, 2010, 4(4):535-544 [6]Boyraz O, Jalali B.Demonstration of 11dB fiber-to-fiber gain in a silicon Raman amplifier[J].IEICE Electronic Express, 2004, 1(14):429-434 [7]Rong H, Jones H, Liu A, et al.A continuous-wave Raman silicon laser[J]. [J].Nature, 2005, 433:725-728 [8]Liang T K, Tsang H K.Role of free carriers from two-photon absorption in Raman ampli?cation in silicon-on-insulator waveguides[J].Applied Physics Letters, 2004, 84(15):2745-2747 [9]Lisinetskii V, Schrader S.Investigation of room- temperature Raman conversion in bulk-silicon[J].Optics Communications, 2012, 285(24):5389-5396 [10]De Leonardis F, Passaro V M.Ultrafast Raman Pulses in SOI Optical Waveguides for Nonlinear Signal Processing[J].IEEE Journal of Selected Topics Quantum Electron., 2008, 14(3):739-751 [11]Bromage J.Raman amplification for fiber communications systems[J].IEEE Journal of Lightwave Technology, 2004, 22(1):79-93 [12]Tsang H K, Liu Y.Nonlinear optical properties of silicon waveguides[J].[J].Semiconductor Science And Technology., 2008, 23(6):1-9 [13]Claps R, Dimitropoulus D, Jalali B, et al.Observation of stimulated Raman amplification in silicon waveguides[J].Optics Express, 2003, 15(11):1731-1739 [14]Liang T K, Tsang H K.Efficient Raman amplification in silicon-on-insulator waveguides[J].Applied Physics Letters, 2003, 85(16):3343-3345 [15]Liu A, Rong H, Paniccia M, et al.Net optical gain in a low loss silicon-on-insulator waveguide by stimulated Raman scattering[J].Optics Express, 2004, 12(18):4261-4268 [16]Jones H, Rong H, Liu A, et al.Net continuous wave optical gain in a low loss silicon-on-insulator waveguide by stimulated Raman scattering[J].Optics Express, 2005, 13(2):519-525 [17]Dimitropoulus D, Jhaveri R, Claps R, et al.Lifetime of photogenerated carriers in silicon- on-insulator rib waveguides[J].[J].Applied Physics Letters, 2005, 86:071115-1-071115-1 [18]Fukuda H, Yamada K, Shoji T, et al.Four-wave mixing in silicon wire waveguides[J].Optics Express, 2005, 13(12):4629-4637 [19]Xu Q, Alimeida V R, Lipson M.Demonstration of high Raman gain in a submicrometer-size silicon-on-insulator waveguide[J].Optics Letters, 2005, 30(1):35-37 [20]Yamada K, Shiane M, Chu T, et al.Nonlinear-optic silicon- nanowire waveguides[J].Japan Journal of Applied Physics, 2005, 44(9A):6541-6545 [21]Espinola R L, Dadap J I, Osgood R M, et al.C-band wavelength conversion in silicon photonic wire waveguides[J].Optics Express, 2005, 13(11):4341-4349 [22]Hong Wenting, Wang S, Optimization of silicon-on-insulator rib waveguide geometry for maximum continuous wave Raman gain[C].Proceedings of 11th International Conference on Optical Communication and Networks (ICOCN 2012), Thailand (Chonburi), IEEE, 2012:1-3.