外场对InPBi量子阱中激子结合能的影响

J4 ›› 2017, Vol. 34 ›› Issue (1): 117-122.

外场对InPBi量子阱中激子结合能的影响

陈丽¹,王海龙¹,陈莎¹,李正²,李士玲¹,龚谦³,⁴

1 曲阜师范大学物理工程学院，山东曲阜 273165； 2 中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室, 上海 200050

收稿日期:2016-01-05 修回日期:2016-01-25 出版日期:2017-01-28 发布日期:2017-01-28
通讯作者: 王海龙（1971-），山东莘县人，博士，教授，博士生导师，主要从事光通信与半导体光电子学方面的研究。 E-mail:hlwang@mail.qfnu.edu.cn（通信联系人）
作者简介:陈丽（1990-）,女，山东胶南人，研究生，主要从事低维半导体电子态的研究。E-mail：chenlijbm@163.com
基金资助:
Supported by National Natural Science Foundation of China(国家自然科学基金,61205055)，Natural Science Foundation of Shandong Province(山东省自然科学基金,ZR2014FM011), Open Project of State Key Laboratory of Functional Materials for Informatics(信息功能材料国家重点实验开放课题,SKL201307)

Effect of external field on exciton binding energy in InPBi quantum well

CHEN Li1, WANG Hailong1, CHEN Sha1, LI Zheng1, LI Shiling1, GONG Qian2

1 College of Physics and Engineering, Qufu Normal University, Qufu 273165, China; 2 State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

Received:2016-01-05 Revised:2016-01-25 Published:2017-01-28 Online:2017-01-28

摘要/Abstract

摘要： 在有效质量近似下运用变分法计算了InAlAs/InPBi/InAlAs量子阱中的激子结合能随阱宽、Al组分、Bi组分的变化情况，分析了外加电场和磁场对激子结合能的影响。结果表明：激子结合能随阱宽增大呈现先增大后减小的趋势；随Al、Bi组分的增大，激子结合能也逐渐增大；外加电场较小时对激子结合能的影响很小，外加电场较大时破坏了激子效应；激子结合能随外加磁场增大呈现单调增大的趋势。计算结果对InAlAs/InPBi/InAlAs量子阱在光电子器件方面的应用有一定指导意义。

关键词: 光电子学；激子结合能；变分法；InAlAs/InPBi/InAlAs量子阱；电场；磁场

Abstract: The change of exciton binding energies in InAlAs/InPBi/InAlAs quantum well with the well width, Al and Bi components is calculated using the variational method in the effective mass approximation. The effects of the applied electric field and magnetic field on exciton binding energy are analyzed. Results show that exciton binding energy increases firstly and then decreases with the increasing of well width. With the increasing of Al and Bi components, the exciton binding energy also increases gradually. Effect of the applied electric field which is smaller on the exciton binding energy is small. When the applied electric field is large enough, it will destroy the exciton effect. Exciton binding energy presents monotonous increasing tendency with the increasing of the applied magnetic field. The calculation results have certain guiding significance for the application of InAlAs/InPBi/InAlAs quantum well in optoelectronic devices.

Key words: optoelectronics; exciton binding energy; variational method; InAlAs/InPBi/InAlAs quantum well; electric field; magnetic field

中图分类号:

O471.1

陈丽王海龙陈莎李正李士玲龚谦. 外场对InPBi量子阱中激子结合能的影响[J]. J4, 2017, 34(1): 117-122.

CHEN Li1, WANG Hailong1, CHEN Sha1, LI Zheng1, LI Shiling1, GONG Qian2. Effect of external field on exciton binding energy in InPBi quantum well [J]. J4, 2017, 34(1): 117-122.

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