Abstract: A new type of metal-insulator-semiconductor hybrid surface plasmonic structure is proposed. Bandgap properties of the structure are investigated by finite-difference-time-domain method, and a clear plasmonic TM bandgap from 0.243~0.271(a/λ) can be formed. According to removing and changing the radius of the air holes in the middle of the two dimensional photonic crystal layer to compose line defect, hybrid waveguide structure 1 and 2 are constituted. The analysis shows that the photon energy whose frequency is located in the bandgap is well confined in the low index layer and only transmites in the line defect. Meanwhile, the transmission lengths at the wavelength of 1550nm are 18.41μm and 15.70μm respectively, the group velocity extreme values of the structure are 0.186c and 0.166c, and the quality factor FoM are 384.74 and 1042.50，respectively. The hybrid surface plasmonic photonic crystal waveguide can control the transmission path of the SPP wave in the low index layer through the line defect of photonic crystal layer. It provides the effective theory basis and evidence for the study of waveguide devices.