| [1]Jae-Seong Park, Jaecheon Han, et al.Formation of low resistance Ti/Al-based ohmic contacts on (11-22) semipolar n-type GaN[J].Journal of Alloys and Compounds, 2015, 652:167-171[2]Liang Pang, Kyekyoon Kim.Improvement of ohmic contacts to n-type GaN using a Ti/Al multi-layered contact scheme[J].Materials Science in Semiconductor Processing, 2015, 29:90-94[3]Shirong Zhao, Heather Mcfavilen, et al.Temperature dependence and high-temperature stability of the annealed NiAu ohmic contact to p-type GaN in air[J].Journal of Electronic Materials, 2016, 45(4):2087-2091[4]Sung Ki Kim, Jae Chun Han, and Tae-YeonSeong.Thermally stable TiAl-based ohmic contacts to N-polar n-GaN by using an indium interlayer[J].Japanese Journal of Applied Physics, 2016, 55(3):031001-1[5]Ho Won Jang, T.Sands,Jong-Lam LeeEffects of KrFexcimer laser irradiation on metal contacts to n-type and p-type GaN[J].Journal of Applied Physics, 2003, 94:5.[J].Journal of Applied Physics, 2003, 94(5):3529-3535[6]Hung-Wen Huang, H.C. Kuo,et alImprovement of InGaNGaN light emitting diode performance with a nano-roughened p-GaN surface by excimer laser-irradiation[J].Materials Chemistry and Physics, 2006, 99(2-3):414-417[7]谈浩琪, 赵艳, 徐晨, 蒋毅坚.准分子激光辐照法改善外延片性质并增强基 发光性能[J].中国激光, 2015, 42(10):190-196[8]Min-Suk Oh, Seong-Ju Park, et al.Low resistance nonalloyed NiAu ohmic contacts to p-GaN irradiated by KrFexcimer laser[J].Applied Physics Letters, 2006, 89(4):042107-1[9]Grace Huiqi Wang, Ting-Chong Wong, et al.Reduced contact resistance and improve surface morphology of ohmic contacts on GaN employing KrF laser irradiation[J].Japanese Journal of Applied Physics, 2011, 50(4):04-D[10]Yow-Jon Lin, Wen-Fung Liu, et al.Excimer-laser-induced activation of Mg-doped GaN layers[J].Applied Physics Letters, 2004, 84(14):2515-2517[11]D.Basak,MLachab,T. Nakanishi,and S. Sakai. Effect of reactive ion etching on the yellow luminescence of GaN[J].Applied Physics Letters, 1999, 75(23):3710-3712[12]Chris G, Van de Walle.Interactions of hydrogen with native defects in GaN[J].Physical Review B, 1997, 56(16):10020-10023[13]A F.Wright. Interaction of hydrogen with gallium vacancies in wurtziteGaN[J].Journal of Applied Physics, 2001, 90(3):1164-1169[14]Su Jin Kim, Tae Geun Kim, et al.Enhanced current transport and injection in thin-film gallium-nitride light-emitting diodes by laser-based doping[J].Applied Materials &Interfaces, 2014, 6(19):16601-16609[15]UedaT, IshidaM, Yuri M.Separation of thin GaN from sapphire by laser lift-off technique[J].Japanese Journal of Applied Physics, 2011, 50(4):041001-1[16]JakielaR, BarczA, Dumiszewska, E, Jagoda, A.Si diffusion in epitaxial GaN[J].Physica Status Solidi C, 2006, 3(6):1416-1419[17]Ho Won Jang, Jong-Lam Lee, et al.Electrical properties of metal contacts on laser-irradiated n-type GaN[J].Applied Physics Letters, 2003, 82(4):580-582[18]B.P. Luther,JM.Delucca,S. E. Mohney,and R. F. Karlicek.. Analysis of a thin AlN interfacial layer in TiAl and PdAl ohmic contacts to n-type GaN[J].Applied Physics, 1997, 71(26):3859-3861[19]Su Jin Kim, TakJeong, and Tae Geun Kim.Improved thermal stability and reduced contact resistance of ohmic contacts on N-Face n-type GaN with laser-assisted doping[J].IEE Electron Device Letters, 2013, 34(3):372-374[20]D.C. Look,DC. Reynolds,J.W. Hemsky et al. Molnar.. Defect donor and acceptor in GaN[J].Physical Review Letters, 1997, 79(12):2273-2276[21]H.W. Jang and JL. Lee.. Origin of the abnormal behavior of contact resistance in ohmic contacts to laser-irradiated n-type GaN[J].Applied Physics Letters, 2009, 94(18):182108-1[22]P.Boguslawski and JBernholc. .Doping properties of C,Si,and Ge impurities in GaN and AlN[J].Physical Review B, 1997, 56(15):9496-9505[23]X.Xu,HLiu,C. Shi,Y. Zhao,S. Fung,and C. D. Beling.. Residual donors and compensation in metalorganic chemical vapor deposition as-grown n-GaN[J].Journal of Applied Physics, 2001, 90(12):6130-6134[24]Bo-Sheng Zheng, Chong-Long Ho, et al.Improved contact characteristics of laser-annealed p-GaN coated with Ni films[J].Journal of Applied Physics, 2015, 118(8):085706-1[25]LidayJozef, et al.Ohmiccontacts to p-GaN on the basis of carbon nanomaterials[J].Journal of Electrical Engineering, 2014, 65(6):386-389[26]LidayJozef, et al.Ohmic contacts to p-GaN based on the single-walled carbon nanotubes[J].Journal of Electrical Engineering, 2013, 64(5):323-326 |
