[1]Grundler D. Large Rashba splitting in InAs quantum wells due to electron wave function penetration into the barrier layers.[J]. Physical Review Letters, 2000,84(1):6074-7. [2]Wilamowski Z, Jantsch W and Malissa H, et al. Evidence and evaluation of the Bychkov-Rashba effect in SiGe/Si/SiGe quantum wells.[J].Physical Review B,2002, 66(19):195315-6. [3]Ganichev S D, Bel’kov V V and Golub L E, et al. Experimental separation of Rashba and Dresselhaus spin‐splittings.[J].Physical Review Letters,2004,92(1):256601-4. [4]Qiu Zhi-Jun, Gui Yong-Sheng and Shu Xiao-Zhou, et al. Spin-orbit and exchange interaction in a HgMnTe magnetic two-dimensional electron gas.[J].Acta Physics Sinica,2004,53(6):1977-1980. [5]Xu Tian-Ning, Wu Hui-Zhen and Sui Chen-Hua. Rashba effect in PbTe/PbSrTe asymmetric quantum wells.[J] Acta Physics Sinica,2008,57(12):7865-7871. [6]Li Zhi-Xin, Xiao Jing-Lin and Wang Hong-Yan. The effective mass of strong-coupled polaron in an asymmetric quantum dot induced with Rashba effect.[J].Modern Physics Letters B ,2011,24(23):2423-2430. [7]Sánchez D and Serra L. Fano-Rashba effect in a quantum wire.[J].Physical Review B,2006,74(15):153313-4. [8]Lu Hai-Feng and Guo Yong. Kondo effect and spin-polarized transport through a quantum dot with Rashba spin-orbit interaction. [J].Physical Review B, 2007, 76(4):045120-5. [9]Governale M. Quantum dots with Rashba spin-orbit coupling.[J].Physical Review Letters,2002,89(20):206802-5. [10]Debald S and Kramer B. Rashba effect and magnetic field in semiconductor quantum wires. [J].Physical Review B, 2005, 71(11):115322-6. [11]Mathine D L, Maracas G N and Gerber D S, et al, Characterization of an AlGaAs/GaAs asymmetric triangular quantum well grown by a digital alloy approximation.[J].Journal Applied Physics, 1994, 75(9):4551-4556. [12]Kastalsky K, Peeters F and Chan W K,et al. Nonlinear transport phenomena in a triangular quantum well.[J].Applied Physics Letters,1991,59(14):1708-1710. [13]Ishizawa S, Kishina K and Araki R, et al. Optically pumped green(530-560nm) stimulated emissions from InGaN/GaN multiple-quantum-well triangular-lattice nanocolum arrays.[J].Applied Physics Express,2011,4(5):1166-1173. [14]Gu Y, Zhang Y S and Wang K, et al.Optimization of AlInGaAs/InGaAs/InAs strain compensated triangular quantum wells grown by gas source molecular beam epitaxy for laser applications in 2.1–2.4μm range.[J].Journal of Crystal Growth,2009,311(7):1935-1938. [15]Zhang Hai-Rui and Song Yong. Properties of polaron in a triangular quantum well induced by the Rashba effect.[J]. Journal of Semiconductors,2014,403(10):1-4. |