量子电子学报 ›› 2026, Vol. 43 ›› Issue (2): 297-318.doi: 10.3969/j.issn.1007-5461.2026.02.012
冯薛飞 1, 刘佳宁 2,3, 樊凯哲 2,3, 杨 天 4,刘星江 1, 袁本政 4, 何昊冉 4, 王卫龙 4*
收稿日期:2024-04-16
修回日期:2024-07-19
出版日期:2026-03-28
发布日期:2026-03-28
通讯作者:
E-mail: wangwl19888@163.com
E-mail:E-mail: wangwl19888@163.com
作者简介: 冯薛飞 ( 1998 - ), 河南许昌人, 研究生, 主要从事超导量子芯片设计方面的研究。E-mail: 951334108@qq.com
基金资助:FENG Xuefei 1 , LIU Jianing 2,3 , FAN Kaizhe 2, 3 , YANG Tian 4 , LIU Xingjiang 1 , YUAN Benzheng 4 , HE Haoran 4 , WANG Weilong 4*
Received:2024-04-16
Revised:2024-07-19
Published:2026-03-28
Online:2026-03-28
摘要: 超导量子计算是实现量子计算的主流技术路线之一。延长超导量子比特的相干时间, 可以提升量子计算精度和增加量子线路深度。尽管超导量子比特的相干时间从1999年的不到1 ns提高到当前的1 ms以上, 但超导量子比特距离真正发挥实际效用依旧很遥远, 因此对超导量子比特相干时间的研究仍十分重要。最近的研究发现电离辐射会导致超导量子比特退相干并产生相关误差。本文首先系统总结了电离辐射对超导量子比特的影响, 电离辐射会导致超导量子芯片中非平衡准粒子和二能级缺陷密度升高, 而过剩的非平衡准粒子和二能级缺陷会直接影响超导量子比特的相干时间。随后详细讨论了降低电离辐射影响的四种策略。最后, 对该领域未来的研究方向进行了展望。
中图分类号:
冯薛飞 , 刘佳宁 , 樊凯哲 , 杨 天 , 刘星江 , 袁本政 , 何昊冉 , 王卫龙 . 电离辐射对超导量子比特的影响及应对策略[J]. 量子电子学报, 2026, 43(2): 297-318.
FENG Xuefei , LIU Jianing , , FAN Kaizhe , , YANG Tian , LIU Xingjiang , YUAN Benzheng , HE Haoran , WANG Weilong . Impact of ionizing radiation on superconducting qubits and mitigation strategies[J]. Chinese Journal of Quantum Electronics, 2026, 43(2): 297-318.
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