CuBi3S5和CuBi3Se5化合物的制备及其基本光电性质研究

J4 ›› 2011, Vol. 28 ›› Issue (5): 558-563.

CuBi₃S₅和CuBi₃Se₅化合物的制备及其基本光电性质研究

苗凤秀,万松明,张庆礼,吕宪顺,顾桂新,殷绍唐

中国科学院安徽光学精密机械研究所, 安徽合肥 230031

收稿日期:2010-05-24 修回日期:2010-05-30 出版日期:2011-09-28 发布日期:2011-08-18
通讯作者: 万松明（1970-）安徽人，研究员，硕士生导师，主要从事新型光电功能晶体材料和高温体系晶体生长机理研究。 E-mail:smwan@aiofm.ac.cn
作者简介:苗凤秀（1984-），女，山东人，研究生，主要从事新型光电功能材料研究。
基金资助:
安徽省自然科学基金项目（070414157），中国科学院合肥物质科学研究院院长基金项目

Preparation and photoelectric properties of CuBi3S5 and CuBi3S5 compounds

MIAO Feng-xiu, WAN Song-ming, ZHANG Qing-li, LV Xian-shun, GU Gui-xin, YIN Shao-Tang

Anhui Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Hefei 230031, China

Received:2010-05-24 Revised:2010-05-30 Published:2011-09-28 Online:2011-08-18

摘要/Abstract

摘要：

开展了CuBi₃S₅和CuBi₃Se₅两种化合物的合成研究，并首次报道了这两种化合物的基本光电性质。以水合肼(N2H4?H2O)为还原剂，以CuCl、BiCl3和S（或Se）为原料，通过溶剂热与固相反应相结合的方法成功制备了CuBi3S5和CuBi3Se5两种化合物的多晶。采用四点探针法获得了这两种化合物的电阻随温度变化的关系，结果表明：CuBi3Se5呈金属性质，而CuBi3S5呈半导体性质。根据Arrhenius关系式计算出CuBi3S5室温下的热激活能为17.1meV。在室温下对CuBi3S5多晶块体进行了霍尔效应实验，结果表明：其载流子浓度为3.75×1017cm-3，霍尔迁移率为14cm2•V-1•s-1，CuBi3S5为n型半导体。漫反射光谱的实验结果表明CuBi3S5的禁带宽度约为0.66eV。

关键词: 材料, 光电性质, 溶剂热法, 四点探针法, 霍尔效应, CuBi3S5

Abstract:

The synthesis of CuBi3S5 and CuBi3Se5 were carried out, and their basic photoelectric properties are reported for the first time. CuBi3Se5 and CuBi3S5 were prepared successfully by solvothermal method (using hydrazine hydrate (N2H4•H2O) as the reductant agent) in conjunction with solid state reaction method. The resistance dependence of CuBi3S5 and CuBi3Se5 on temperature were measured by four-point probe method, the results showed that the CuBi3S5 has semiconductor nature and CuBi3Se5 has metal nature. The thermal activation energy of CuBi3S5 was about 17.1meV calculated from Arrhenius equation. The Hall effect experiment of CuBi3S5 was carried out at room temperature, its carrier concentration is about 3.75×1017 cm-3 and Hall mobility is about 14 cm2•V-1•s-1. CuBi3S5 is an n-type semiconductor. The diffuse reflectance spectroscopy indicated that the band gap of CuBi3S5 is about 0.66eV.

Key words: materials, photoelectric properties, solvothermal method, four-point probe method, Hall effect, CuBi3S5

中图分类号:

苗凤秀万松明张庆礼吕宪顺顾桂新殷绍唐. CuBi₃S₅和CuBi₃Se₅化合物的制备及其基本光电性质研究[J]. J4, 2011, 28(5): 558-563.

MIAO Feng-xiu, WAN Song-ming, ZHANG Qing-li, LV Xian-shun, GU Gui-xin, YIN Shao-Tang. Preparation and photoelectric properties of CuBi3S5 and CuBi3S5 compounds[J]. J4, 2011, 28(5): 558-563.

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CuBi₃S₅和CuBi₃Se₅化合物的制备及其基本光电性质研究

Preparation and photoelectric properties of CuBi3S5 and CuBi3S5 compounds

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