外磁场下具有Dzyaloshinski-Moriya作用的海森堡链中的热纠缠

量子电子学报 ›› 2018, Vol. 35 ›› Issue (4): 444-450.

外磁场下具有Dzyaloshinski-Moriya作用的海森堡链中的热纠缠

黄利元,方卯发

1福建省厦门大学嘉庚学院信息科学与技术学院，福建漳州 363105；
2湖南师范大学物理与信息科学学院，湖南长沙 410081

收稿日期:2017-05-15 修回日期:2017-09-07 出版日期:2018-07-28 发布日期:2018-07-12
通讯作者: 黄利元（1982-）女，湖南临武人，主要研究方向为量子光学。 E-mail:lyhuang@xujc.com

Thermal entanglement in a Heisenberg chain with Dzyaloshinski-Moriya anisotropic antisymmetric interaction in external magnetic fields

Huang Liyuan, Fang Maofa

Received:2017-05-15 Revised:2017-09-07 Published:2018-07-28 Online:2018-07-12

摘要/Abstract

摘要：

仔细分析了DM相互作用常数D、温度T、均匀磁场B、非均匀磁场b、自旋耦合常数J和各向异性参数△对纠缠度C的影响。结果表明：虽然T和B升高使纠缠度C变小，但D增大使纠缠度变大，而且它会使Bt变大。当B>Bt和B

Abstract:

The influences of the DM coupling constant D, the temperature T, the uniform external magnetic field B, the nonuniform magnetic field b, the real coupling constant J and the anisotropic parameter Δ on the thermal entanglement measured by the concurrence C are studied in detail. The results show that both the increasing T and |B| decrease the C, but the increasing D develops the C, and D can also heighten the value of the threshold magnetic field |Bt|, before and after which the b has different influence on C. By comparison, it is found that the B and b have different effects on the area about J and Δ (JΔ > 0) where exists thermal entanglement as well as on C. What’s more, as the T increases, the variation rule of the range of B in which exists the thermal entanglement is different from b. As a result, the thermal entanglement can be controlled by adjusting the values of B, b, D, T, J and Δ in various terrible environment, such as in strong external magnetic field, or high temperature environment, which will be useful in the research of quantum information in solid systems.

中图分类号:

O431.2

黄利元方卯发. 外磁场下具有Dzyaloshinski-Moriya作用的海森堡链中的热纠缠[J]. 量子电子学报, 2018, 35(4): 444-450.

Huang Liyuan, Fang Maofa. Thermal entanglement in a Heisenberg chain with Dzyaloshinski-Moriya anisotropic antisymmetric interaction in external magnetic fields[J]. Chinese Journal of Quantum Electronics, 2018, 35(4): 444-450.

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