量子电子学报 ›› 2022, Vol. 39 ›› Issue (5): 687-706.doi: 10.3969/j.issn.1007-5461.2022.05.002

• 综述 • 上一篇    下一篇

YAG 晶体的位错研究进展

张 瑞1 , 梅大江1,3∗ , 石小兔2,4,5 , 马荣国2,4,5 , 张庆礼2,4,5∗ , 窦仁勤2,4 , 刘文鹏2,4   

  1. ( 1 上海工程技术大学化学化工学院, 上海 201620; 2 中国科学院合肥物质科学研究院安徽光学精密机械研究所, 安徽省光子器件与材料重点实验室, 安徽 合肥 230031; 3 中国科学院福建物质结构研究所结构化学国家重点实验室, 福建 福州 350002; 4 先进激光技术安徽省实验室, 安徽 合肥 230037; 5 中国科学技术大学, 安徽 合肥 230026 )
  • 收稿日期:2021-12-04 修回日期:2022-06-16 出版日期:2022-09-28 发布日期:2022-09-28
  • 通讯作者: E-mail: meidajiang@163.com; zql@aiofm.ac.cn E-mail:E-mail: meidajiang@163.com; zql@aiofm.ac.cn
  • 作者简介:张 瑞 ( 1997 - ), 研究生, 主要从事晶体缺陷方面的研究。 E-mail: 3322408502@qq.com
  • 基金资助:
    Supported by Foundation of Advanced Laser Technology Laboratory of Anhui Province (先进激光技术安徽省实验室开放研究基金项 目, AHL 20220 ZR04), National Natural Science Foundation of China (国家自然科学基金青年科学基金项目, 51802307)

Research progress of dislocation of YAG crystal

ZHANG Rui 1 , MEI Dajiang 1,3∗ , SHI Xiaotu 2,4,5 , MA Rongguo 2,4,5 , ZHANG Qingli 2,4,5∗ , DOU Renqin 2,4 , LIU Wenpeng 2,4   

  1. ( 1 College of Chemistry and Chemical Engineering, Shanghai University of Engineering Science, Shanghai 201620, China; 2 Key Laboratory of Photonic Devices and Materials, Anhui Institute of Optics and Fine Mechanics, HFIPS, Chinese Academy of Sciences, Hefei 230031, China; 3 State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China; 4 Advanced Laser Technology Laboratory of Anhui Province, Hefei 230037, China; 5 University of Science and Technology of China, Hefei 230026, China )
  • Received:2021-12-04 Revised:2022-06-16 Published:2022-09-28 Online:2022-09-28

摘要: 大尺寸 YAG 晶体的生长不可避免地会出现各种缺陷, 位错是晶体中主要的缺陷之一。位错会产生应力 双折射, 降低晶体的光学均匀性, 增大损耗、缩短使用寿命等, 因此生长出无位错或低位错 YAG 晶体对发展高效 率固体激光器具有重要意义。本文综述了近四十年来国内外对于 YAG 晶体的位错研究状况,总结了化学腐蚀 法、缀饰法、同步辐射法、应力双折射法、X 射线透射形貌术、光散射层貌术等在位错方面的研究以及 TEM、 SEM 等方法在 YAG 位错研究上的应用, 并对晶体生长工艺对晶体内部位错密度与分布的影响进行了介绍, 为大 尺寸、高品质 YAG 激光晶体的制备和位错研究提供了参考。

关键词: 激光技术, YAG 晶体, 位错, 晶体缺陷, 晶体生长

Abstract: There exists various defects during the growth of large-size YAG crystals, and dislocation is one of the main defects. Dislocation can cause stress birefringence, decrease the optical uniformity, increase optical losses, shorten the work life of the crystal and so on, therefore, it is very important to grow YAG crystal without dislocation or with low dislocation for the development of high-efficiency solid-state laser. This paper summarizes the research progress of dislocation in YAG crystal at home and abroad in the recent 40 years, including the research on dislocation in YAG crystal by chemical etching method, the decoration method, synchrotron radiation method, stress birefringence method, X-ray micro tomography and light scattering tomography, as well as the application examples of TEM and SEM, and also introduces the effect of crystal growth process on dislocation density and distribution in crystal. It provides a reference for the dislocation research and the growth of large-size and high-quality YAG laser crystals.

Key words: laser techniques, YAG crystal, dislocation, crystal defect, crystal growth

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