基于阱式阶梯电子阻挡层的深紫外激光二极管性能研究

doi:10.3969/j.issn.1007-5461.2023.01.007

量子电子学报 ›› 2023, Vol. 40 ›› Issue (1): 62-68.doi: 10.3969/j.issn.1007-5461.2023.01.007

基于阱式阶梯电子阻挡层的深紫外激光二极管性能研究

魏士钦,王瑶,王梦真,王芳,刘俊杰,刘玉怀

( 1 郑州大学信息工程学院电子材料与系统国际联合研究中心, 河南郑州 450001; 2 郑州唯独电子科技有限公司, 河南郑州 450001; 3 郑州大学产业技术研究院有限公司, 河南郑州 450001 )

收稿日期:2021-04-08 修回日期:2021-06-09 出版日期:2023-01-28 发布日期:2023-01-28
通讯作者: 刘玉怀 E-mail:ieyhliu@zzu.edu.cn
基金资助:
国家重点研发计划 (2016YFE0118400), 宁波市“科技创新 2025”重大专项 (2019B10129)

Performance of deep ultraviolet laser diode based on well-type ladder electron barrier

WEI Shiqin 1 , WANG Yao 1 , WANG Mengzhen 1 , WANG Fang 1 , LIU Junjie 1 , LIU Yuhuai 1,2,3∗

( 1 National Center for International Joint Research of Electronic Materials and Systems, School of Information Engineering, Zhengzhou University, Zhengzhou 450001, China; 2 Zhengzhou Way Do Electronics Technology Co. Ltd., Zhengzhou 450001, China; 3 Industrial Technology Research Institute Co. Ltd., Zhengzhou University, Zhengzhou 450001, China )

Received:2021-04-08 Revised:2021-06-09 Published:2023-01-28 Online:2023-01-28

摘要/Abstract

摘要： 为有效降低深紫外激光二极管 (DUV-LD) 在有源区的电子泄露, 提出了一种阱式阶梯电子阻挡层 (EBL) 结构。利用 Crosslight 软件对矩形、阶梯形和阱式阶梯形三种不同的结构分别进行了仿真研究, 详细对比分析了三种结构器件的能带图、辐射复合率、电子空穴浓度、P − I 以及 V − I 特性等, 结果表明阱式阶梯 EBL 对电子的泄露抑制效果最好, 从而使得器件的光学和电学性能得到优化。

关键词: 激光技术, 深紫外激光二极管, AlGaN, 阱式阶梯电子阻挡层, 电子泄露

Abstract: In order to effectively reduce the electron leakage of the deep ultraviolet laser diode (DUV-LD) in the active region, a well-type ladder electron blocking layer (EBL) structure is proposed. Crosslight software is used to simulate three different structures of rectangle type EBL, ladder type EBL and well type ladder EBL, compare the energy band diagram, radiation recombination rate, electron hole concentration, PI and VI characteristics of the three structure devices. It is observed that the well ladder type EBL has a better suppression effect on the leakage of electrons, leading to the improved optical and electrical properties of the DUV-LD device.

Key words: laser techniques, deep ultraviolet laser diode, AlGaN, well-type ladder electron barrier; electron leakage

中图分类号:

O472

魏士钦王瑶王梦真王芳刘俊杰刘玉怀. 基于阱式阶梯电子阻挡层的深紫外激光二极管性能研究[J]. 量子电子学报, 2023, 40(1): 62-68.

WEI Shiqin , WANG Yao , WANG Mengzhen , WANG Fang , LIU Junjie , LIU Yuhuai , ∗. Performance of deep ultraviolet laser diode based on well-type ladder electron barrier[J]. Chinese Journal of Quantum Electronics, 2023, 40(1): 62-68.

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基于阱式阶梯电子阻挡层的深紫外激光二极管性能研究

Performance of deep ultraviolet laser diode based on well-type ladder electron barrier

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