具有M 形空穴阻挡层结构的AlGaN 基
深紫外激光二极管性能优化

doi:10.3969/j.issn.1007-5461.2022.04.013

量子电子学报 ›› 2022, Vol. 39 ›› Issue (4): 583-590.doi: 10.3969/j.issn.1007-5461.2022.04.013

具有M 形空穴阻挡层结构的AlGaN 基深紫外激光二极管性能优化

张傲翔1, 王瑶1, 王梦真1, 魏士钦1, 王芳1;2, 刘玉怀1;2;3*

( 1 郑州大学电气与信息工程学院电子材料与系统国际联合研究中心, 河南郑州450001; 2 郑州唯独电子科技有限公司, 河南郑州450001; 3 郑州大学产业技术研究院有限公司, 河南郑州450001 )

收稿日期:2021-06-11 修回日期:2021-07-17 出版日期:2022-07-28 发布日期:2022-07-28
通讯作者: E-mail: ieyhliu@zzu.edu.cn E-mail:E-mail: ieyhliu@zzu.edu.cn
作者简介:张傲翔( 1998 - ), 河南平顶山人, 研究生, 主要从事氮化物半导体器件设计方面的研究。E-mail: 1150525508@qq.com
基金资助:
Supported by National Key Research and Development Program (国家重点研发计划, 2016YFE0118400), Zhengzhou 1125 Innovation Project (郑州市1125 科技创新项目, ZZ2018-45), Ningbo 2025 Key Innovation Project (宁波市重大科技创新专项, 2019B10129)

Performance optimization of AlGaN-based deep ultraviolet laser diode with M-shaped hole barrier structure

ZHANG Aoxiang1, WANG Yao1, WANG Mengzhen1, WEI Shiqin1, WANG Fang1;2, LIU Yuhuai1;2;3*

( 1 National Center for International Joint Research of Electronic Materials and Systems, School of Electrical and Information Engineering, Zhengzhou University, Zhengzhou 450001, China; 2 Zhengzhou Way Do Electronics Technology Co. Ltd., Zhengzhou 450001, China; 3 Industrial Technology Research Institute Co. Ltd., Zhengzhou University, Zhengzhou 450001, China )

Received:2021-06-11 Revised:2021-07-17 Published:2022-07-28 Online:2022-07-28

摘要/Abstract

摘要： 为有效降低深紫外激光二极管(DUV-LD) 在n 型区的空穴泄露, 优化其工作性能, 提出了一种新颖的M 形空穴阻挡层(HBL) 结构。使用Crosslight 软件对矩形、N 形和M 形三种空穴阻挡层结构进行仿真研究和对比, 发现M 形空穴阻挡层结构能够更有效地降低n 型区的空穴泄露, 增加量子阱内的辐射复合率, 同时降低激光二极管的阈值电压与阈值电流, 提升激光二极管的电光转换效率与输出功率, 表明M 形空穴阻挡层结构能够有效降低DUV-LD 在n 型区的空穴泄露并优化其工作性能。

关键词: 激光技术, 深紫外激光二极管, AlGaN, M 形空穴阻挡层, 空穴泄露

Abstract: In order to reduce the hole leakage of deep ultraviolet laser diode (DUV-LD) in the n-type region effectively and optimize its performance, a novel M-shaped hole blocking layer (HBL) structure is proposed. By using Crosslight software，the rectangular, N-shaped and M-shaped HBL structures are simulated and compared. It is found that the M-shaped HBL structure can more effectively reduce the hole leakage in the n-type region, increase the radiation recombination rate in the quantum well, reduce the threshold voltage and threshold current of the laser diode, and improve the electro-optic conversion efficiency and output power of the laser diode. It is shown that the M-shaped HBL structure can effectively reduce the hole leakage of DUV-LD in the n-type region and optimize its performance.

Key words: laser techniques, deep ultraviolet laser diode, AlGaN, M-shaped hole blocking layer, hole leakage

中图分类号:

O472

张傲翔, 王瑶, 王梦真, 魏士钦, 王芳, 刘玉怀, . 具有M 形空穴阻挡层结构的AlGaN 基深紫外激光二极管性能优化[J]. 量子电子学报, 2022, 39(4): 583-590.

ZHANG Aoxiang, WANG Yao, WANG Mengzhen, WEI Shiqin, WANG Fang, LIU Yuhuai, . Performance optimization of AlGaN-based deep ultraviolet laser diode with M-shaped hole barrier structure[J]. Chinese Journal of Quantum Electronics, 2022, 39(4): 583-590.

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具有M 形空穴阻挡层结构的AlGaN 基深紫外激光二极管性能优化

Performance optimization of AlGaN-based deep ultraviolet laser diode with M-shaped hole barrier structure

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具有M 形空穴阻挡层结构的AlGaN 基 深紫外激光二极管性能优化

Performance optimization of AlGaN-based deep ultraviolet laser diode with M-shaped hole barrier structure

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具有M 形空穴阻挡层结构的AlGaN 基深紫外激光二极管性能优化