Preparation and photoelectric properties of CuBi3S5 and CuBi3S5 compounds

Abstract

Abstract:

The synthesis of CuBi3S5 and CuBi3Se5 were carried out, and their basic photoelectric properties are reported for the first time. CuBi3Se5 and CuBi3S5 were prepared successfully by solvothermal method (using hydrazine hydrate (N2H4•H2O) as the reductant agent) in conjunction with solid state reaction method. The resistance dependence of CuBi3S5 and CuBi3Se5 on temperature were measured by four-point probe method, the results showed that the CuBi3S5 has semiconductor nature and CuBi3Se5 has metal nature. The thermal activation energy of CuBi3S5 was about 17.1meV calculated from Arrhenius equation. The Hall effect experiment of CuBi3S5 was carried out at room temperature, its carrier concentration is about 3.75×1017 cm-3 and Hall mobility is about 14 cm2•V-1•s-1. CuBi3S5 is an n-type semiconductor. The diffuse reflectance spectroscopy indicated that the band gap of CuBi3S5 is about 0.66eV.

Key words: materials, photoelectric properties, solvothermal method, four-point probe method, Hall effect, CuBi3S5

CLC Number:

MIAO Feng-xiu, WAN Song-ming, ZHANG Qing-li, LV Xian-shun, GU Gui-xin, YIN Shao-Tang. Preparation and photoelectric properties of CuBi3S5 and CuBi3S5 compounds[J]. J4, 2011, 28(5): 558-563.

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Preparation and photoelectric properties of CuBi3S5 and CuBi3S5 compounds

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