[1] Brunner T A. Optimization of optical ProPerties of resist processes[C]. SPIE,1991, 1466: 297-308.
[2] Huang Victor,Wu T S, Yang Mars, et al. Dual anti-reflection layers for ARC/hard-mask applications[C]. SPIE, 2006, 6154(3Q): 61543-61548.
[3] Oh Seung-Chul, Kim Young-Cheol, Nah Sang-Hoon, et al. Optimizing of thin film interference effects in KrF lithography for 0.15um design rules[C]. SPIE, 2000, 3999: 926-934.
[4] James A B, Michael C, Dianne S, et al. Thin-film interference effects for thin resist films on a broadband scanner[C]. SPIE, 1998, 3334: 685-691.
[5] You Li-bing, Zhou Yi, Liang Xu, et al. Recent development of ArF excimer laser technology for lithography[J]. Chinese Journal of Quantum Electronics(量子电子学报), 2010, 27(5): 522~527(in Chinese).
[6] Mack C A. Fundamental Principles of Optical Lithography: the Science of Microfabrication [M]. Chichester: John Wiley & Sons , 2007: 147, 162, 169, 219.
[7] Jung Mi-Rim, Kwak Eun-A, An Ilsin, et al. Single anti-re?ection coating optimization with di?erent polarizations for hyper numerical aperture immersion lithography[J]. Japanese Journal of Applied Physics, 2006, 45(12): 9280.
[8] Chen H L, Fan W D, Wang T J, et al. Multi-layer bottom antireflective coating structures for high NA ArF exposure system applications[C]. SPIE, 2002, 4690: 1085-1092.
[9] Yasushi Sakaida, Satoshi Takei, Makoto Nakajima, et al. Multi-layer BARCs for hyper-NA immersion lithography process[C]. SPIE, 2007, 6519(65192A): 65191-65192.
[10] Yu Shinn-Sheng, Lin Burn J, Yen Anthony, et al. Thin-film optimization strategy in high numerical aperture optical lithography, part 1: principlies[J]. Journal of Microlithography, Microfabrication, and Microsystems, 2005, 4(4): 43001-43003.
[11] Smith B W, Zavyalova L, Estroff A. Benefiting from polarization-effects on high-NA imaging[C]. SPIE, 2004, 5377: 68-79.
[12] Flagello D, Geh B, Hansen S, et al. Polarization effects associated with hyper-numerical-aperture (> 1) lithography[J]. Journal of Microlithography, Microfabrication, and Microsystems, 2005, 4(3): 31104-31117. |