J4 ›› 2017, Vol. 34 ›› Issue (1): 113-116.

• Semiconductor Opto-electronics • Previous Articles     Next Articles

Effects of impurity on ground state energy and binding energy of square quantum dots

HUANG Xiaoya,WANG Xinlian   

  1. School of Mathematics and Physics, Henan University of Urban Construction, Pingdingshan 467036, China
  • Received:2015-07-31 Revised:2016-01-06 Published:2017-01-28 Online:2017-01-28

Abstract: The quantum system with impurity in two-dimensional square quantum dots is solved by using finite difference method, and discrete Schrodinger equation is obtained. The energy of electrons in ground state in the system and binding energy of impurity are calculated numerically. The effects of impurity ions with different spacing on the ground state energy and binding energy of electrons in different sizes of quantum dots are discussed. Calculation results show that the electron ground state energy in quantum dots is a function of the impurity position and quantum dot size. The ground state energy decreases rapidly and then increases slowly with increasing of quantum dot size, and it tends to a fixed value finally. The binding energy of impurity to electron decreases with increasing of quantum dot size. The smaller the impurity spacing is, the greater the influence of the quantum dot ground state energy will be.

Key words: square quantum dots; finite difference method; impurity; ground state energy; binding energy

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