Chinese Journal of Quantum Electronics ›› 2020, Vol. 37 ›› Issue (2): 157-164.

• Laser Tech. and Devices • Previous Articles     Next Articles

Beam shaping technology of semiconductor laser array for gated imaging

ZHANG Baishun1, FAN Yisong2, WU Bi3*, GUO Huan2,4, CHEN Chuncheng2,4, GUO Qiang2   

  1. 1 Anhui Public Security College, Hefei 230031, China; 2 Anhui Provincial Key Laboratory of Photonic Devices and Materials, Anhui Institute of Optics and Fine Mechanics, Chinese Academy of Sciences , Hefei 230031, China; 3 Air Force Research Institute, Beijing 100085, China; 4 University of Science and Technology of China, Hefei 230026, China
  • Received:2019-08-02 Revised:2019-11-18 Published:2020-03-28 Online:2020-03-28
  • Contact: zhangbaishun zhangbaishunzhangbaishun E-mail:skyblueblue@qq.com

Abstract: The whole assembly of the range-gated imaging system based on the semiconductor laser array is introduced, and three kinds of semiconductor laser beam shaping designs are proposed according to the requirements of the system. The simulation and experimental comparative analysis of the three laser beam shaping designs are carried out by using Zemax software. Results show that the stacked array macro lens collimator has the advantages of simple structure, low assembly accuracy and low cost, but it requires high parallelism and coplanarity between bars. The collimation scheme of optical fiber coupling array has the smallest beam divergence angle, but larger coupling loss. The beam shaping scheme of the stacked array based on cylindrical microlens has a high light collection efficiency, a smaller divergence angle and moderate process complexity, which is more suitable for the long-distance active lighting of the laser imaging system engineering.

Key words: range-gating, laser imaging, diode laser, beam shaping