Chinese Journal of Quantum Electronics ›› 2023, Vol. 40 ›› Issue (1): 62-68.doi: 10.3969/j.issn.1007-5461.2023.01.007

• Laser Tech. and Devices • Previous Articles     Next Articles

Performance of deep ultraviolet laser diode based on well-type ladder electron barrier

WEI Shiqin 1 , WANG Yao 1 , WANG Mengzhen 1 , WANG Fang 1 , LIU Junjie 1 , LIU Yuhuai 1,2,3∗   

  1. ( 1 National Center for International Joint Research of Electronic Materials and Systems, School of Information Engineering, Zhengzhou University, Zhengzhou 450001, China; 2 Zhengzhou Way Do Electronics Technology Co. Ltd., Zhengzhou 450001, China; 3 Industrial Technology Research Institute Co. Ltd., Zhengzhou University, Zhengzhou 450001, China ) 
  • Received:2021-04-08 Revised:2021-06-09 Published:2023-01-28 Online:2023-01-28

Abstract: In order to effectively reduce the electron leakage of the deep ultraviolet laser diode (DUV-LD) in the active region, a well-type ladder electron blocking layer (EBL) structure is proposed. Crosslight software is used to simulate three different structures of rectangle type EBL, ladder type EBL and well type ladder EBL, compare the energy band diagram, radiation recombination rate, electron hole concentration, PI and VI characteristics of the three structure devices. It is observed that the well ladder type EBL has a better suppression effect on the leakage of electrons, leading to the improved optical and electrical properties of the DUV-LD device.

Key words: laser techniques, deep ultraviolet laser diode, AlGaN, well-type ladder electron barrier; electron leakage

CLC Number: