量子电子学报 ›› 2026, Vol. 43 ›› Issue (2): 218-226.doi: 10.3969/j.issn.1007-5461.2026.02.005

• 先进光电检测与量子技术 • 上一篇    下一篇

高线性度高集成度大容差硅基调制器 (特邀)

张宇煊 1, 李美欣 1, 姜 浩 1, 王浩然 1, 罗丹妮 1, 张赞允 1,2*   

  1. 1 天津工业大学电子与信息工程学院, 天津 300387; 2 天津工业大学, 天津市光电检测技术与系统重点实验室, 天津 300387
  • 收稿日期:2025-08-29 修回日期:2025-11-20 出版日期:2026-03-28 发布日期:2026-03-28
  • 通讯作者: E-mail: zhangzanyun@tiangong.edu.cn E-mail:E-mail: zhangzanyun@tiangong.edu.cn
  • 作者简介:张宇煊 ( 2000 - ), 河北唐山人, 研究生, 主要从事高线性度调制器方面的研究。E-mail: 2331081056@tiangong.edu.cn
  • 基金资助:
    国家自然科学基金 (62341508), 天津市光电探测技术与系统重点实验室开放课题 (2024LODTS104)

High linearity, high integration, and wide tolerance silicon⁃based modulator (Invited)

ZHANG Yuxuan 1 , LI Meixin 1 , JIANG Hao 1 , WANG Haoran 1 , LUO Danni 1 , ZHANG Zanyun 1,2*   

  1. 1 School of Electronics and Information Engineering, Tiangong University, Tianjin 300387, China; 2 Tianjin Key Laboratory of Optoelectronic Detection Technology and Systems, Tiangong University, Tianjin 300387, China
  • Received:2025-08-29 Revised:2025-11-20 Published:2026-03-28 Online:2026-03-28
  • Supported by:

摘要: 微波光子学链路对调制器的线性度提出了极高要求, 传统硅基微环辅助马赫-曾德尔高线性度调制 器(RAMZM)因制造容差小、集成度低而难以大规模应用。本文提出了一种高容差、高集成度的RAMZM, 以欧拉弯曲波导代替常规圆波导, 在3 µm极限弯曲半径下实现−0.0034 dB的超低插入损耗; 通过将微环耦合在马赫-曾德尔干涉仪内部, 相比于微环外置的方案, 器件面积节约了约1×104 µm2 ; 通过引入可调耦合区使得该调制器工艺容差扩展至±18 nm。此外, 基于1 GHz双音测试的仿真结果表明, 该调制器三阶交调失真对应的自由无杂散动态范围可达114.66 dB⋅Hz2/3 , 验证了所提结构的高线性度优势。

关键词: 硅基高线性度调制器, 微波光子学, 欧拉弯曲波导, 三阶互调失真

Abstract: Microwave photonics links impose extremely high requirements on the linearity of modulators, whereas traditional silicon-based micro-ring assisted Mach-Zehnder high linearity modulators (RAMZM) are difficult to apply on a large scale due to their small manufacturing tolerances and low integration. This article proposes a high tolerance and high integration RAMZM, which replaces conventional circular waveguides with Euler bent waveguides and achieves ultra-low insertion loss of − 0.0034 dB at a maximum bending radius of 3 µm. By coupling the micro-ring inside the Mach-Zehnder interferometer, the device area is saved by about 1×104 µm2 compared to the external micro-ring scheme. At the same time, an adjustable coupling region is introduced to extend the process tolerance of the modulator to ±18 nm. In addition, simulation results based on 1 GHz dual-tone testing show that the spurious-free dynamic range corresponding to third-order intermodulation distortion of the modulator can reach 114.66 dB⋅Hz2/3 , verifying the high linearity advantage of the proposed structure.

Key words: silicon-based high linearity modulator, microwave photonics, Euler bent waveguide, third-order intermodulation distortion

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