J4 ›› 2010, Vol. 27 ›› Issue (2): 221-226.

• 激光应用 • 上一篇    下一篇

退火过程对c轴择优取向的ZnO薄膜的光学性质的影响

谢学武 廖源 张五堂 余庆选 傅竹西   

  1. 中国科学技术大学物理系,安徽 合肥, 230026
  • 出版日期:2010-03-28 发布日期:2010-03-05
  • 通讯作者: 廖 源 (1971- ),男,中国科学技术大学物理系副教授,主要从事半导体薄膜物理的研究。 E-mail:liaoyuan@ustc.edu.cn
  • 作者简介:谢学武 (1983- ),男,2006年毕业于安徽大学材料物理专业,2009年获得中国科学技术大学凝聚态物理专业硕士学位,主要从事于ZnO光电薄膜的制备和性质研究。E-mail:xiexueuu@mail.ustc.edu.cn

Effect of annealing processes on optical properties of c-axis oriented ZnO films

XIE Xue-Wu, LIAO Yuan, ZHANG Wu-Tang, YU Qing-Xuan, FU Zhu-Xi   

  1. Department of Physics, University of Science and Technology of China, Hefei 230026, China
  • Published:2010-03-28 Online:2010-03-05

摘要:

利用溶胶凝胶法在石英衬底上采用旋涂法制备出ZnO薄膜,通过X射线衍射仪发现不同的退火温度对ZnO薄膜的择优取向有很大影响;通过紫外可见分光光度计和室温发光谱可以看出,制备的薄膜有很好的光学透过性和很强的紫外发光特性,而不同的退火温度对其光学性质有很大的影响。实验发现采用此种方法在650℃左右退火是一个合适的退火温度,结构特性和光学性质都相对较好;采用热分析方法可知ZnO将在375℃左右从非晶转向结晶状态,因而在常规ZnO薄膜制备方法中增加一步500oC的热处理将有助于提高ZnO薄膜的结晶质量。

关键词: 材料, 溶胶凝胶, ZnO薄膜, c轴择优取向, 光学性质

Abstract:

Zinc oxide films were deposited on fused quartz wafers using sol–gel technique and by adopting the spin-coating method. The structure of c-axis oriented ZnO films measured by X-ray diffraction is mainly decided by the post-annealing temperature. ZnO films annealed at different temperatures has a high transmittance and strong UV emission peaks which were measured by UV-VIS double-beam spectrophotometer and PL spectra. It is obvious that the annealing temperature at 650℃ is the best condition for high-quality ZnO film. The thermogravimetric analysis(TGA) of the sol was carried out, and it is found that the temperature from amorphous to more ordered state is 375℃, and crystal ZnO film is helpful to the deposition of ZnO film with high quality via the sol-gel method.

Key words: materials, sol-gel, ZnO thin film, c-axis oriented, optical property