J4 ›› 2010, Vol. 27 ›› Issue (2): 242-246.

• 半导体光电 • 上一篇    下一篇

半导体极性膜中束缚磁极化子的自陷能

王秀清   

  1. 内蒙古民族大学
  • 收稿日期:2009-08-04 修回日期:2010-03-05 出版日期:2010-03-28 发布日期:2010-03-05
  • 通讯作者: 王秀清
  • 基金资助:
    内蒙古自然科学基金

The of the bound Magnetpolaron in a polar slab of the Semiconducter

  • Received:2009-08-04 Revised:2010-03-05 Published:2010-03-28 Online:2010-03-05

摘要: 采用线性组合算符法和幺正变换方法,研究极性晶体膜中束缚磁极化子的自陷能随膜厚d的变化关系。得出束缚磁极化子的自陷能由两部分组成:第一部分是由于电子—体LO声子相互作用所引起的( )极化子效应;第二部分则是电子-SO声子相互作用引起的。后者又包含两部分,分别是电子与极性膜中两支表面声子相互作用的贡献( )。通过对KCl半导体膜的数值计算表明, 和磁极化子的振动频率 随膜厚d的增加而减少;当膜厚大于5nm时,总自陷能 趋于一稳定值。另外,由于稳恒磁场的存在,使磁极化子的自陷能增大,这主要是由于稳恒磁场的存在,使电子—声子间的相互作用增强,极化子效应增大而引起的。

关键词: 束缚磁极化子, 线性组合算符, 自陷能, bound Magnetpolaron, Huybrecht’s linear combination operator, self-trapping energy

Abstract: Taking into account the interaction of an electron with bulk longitudinal-optical (LO) and surface longitudinal-optical (SO) phonons, we study the ground state energy and self-trapping energy of the bound Magnetpolaron in a polar slab by using the Huybrecht’s linear combination operator method. the ground state energy and the self-trapping energy are all derived as function of slab thickness. includes two parts, one is , the other is ; taking KCl as an example , and all reduce with the increase of the slab thickness, and when the slab thickness d is more than 5nm, is about to a stable number. especially, increases when there is the magnetic fild, because of the interactions was strengthened between the electrons and phonons.