溶胶凝胶法制备钼掺杂氧化锌薄膜及性质研究

J4 ›› 2011, Vol. 28 ›› Issue (2): 247-252.

• 第二届全国光学青年学术论坛论文选登 • 上一篇

溶胶凝胶法制备钼掺杂氧化锌薄膜及性质研究

邵景珍¹ 董伟伟^1，2 陶汝华^1，2 邓赞红^1，2 周曙¹ 方晓东^1，2

1 中国科学院安徽光学精密机械研究所，安徽省光子器件与材料重点实验室，安徽合肥 230031；
2 中国科学院新型薄膜太阳能电池重点实验室，安徽合肥 230031

发布日期:2011-03-03
通讯作者: 方晓东，研究员，博士生导师，主要从事功能氧化物薄膜和准分子技术的研究工作。 E-mail:xdfang@aiofm.ac.cn
作者简介:邵景珍，博士研究生，主要从事光电功能薄膜的制备与研究工作。E-mail: jzshao@mail.ustc.edu.cn
基金资助:
Anhui Provincial Natural Science Foundation (090414169), Anhui Provincial International Science and Technology Cooperation Program (10080703021)

Characterization of Mo-doped ZnO thin films prepared by the sol–gel method

SHAO Jing-Zhen¹, DONG Wei-Wei^1，2, TAO Ru-Hua^1，2, DENG Zan-Hong^1，2, ZHOU Shu, FANG Xiao-Dong^1，2

1 Anhui Provincial Key Laboratory of Photonic Devices and Materials, Anhui Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Hefei 230031, China；
2 Key Laboratory of New Thin Film Solar Cells, Institue of Plasma Physics, Chinese Academy of Sciences, Hefei 230031, China）

Online:2011-03-03

摘要/Abstract

摘要：

利用溶胶凝胶法在Al₂O₃衬底上制备出了c轴择优取向的钼掺杂氧化锌（MZO）透明导电薄膜，研究了钼的掺杂量(0~1 at%)对钼掺杂氧化锌薄膜光电性能的影响。研究结果表明：所制备的薄膜为六方纤锌矿型结构且表面平整、致密，通过高温真空退火，MZO薄膜的电阻率明显降低，且随着钼含量的增加，MZO薄膜的电阻率呈现出先减小后增大的趋势，当钼含量为0.4at.%时，获得最小电阻率为0.13 Ωcm。薄膜在近红外区域(800~2000 nm)的平均透过率大于85%，这可以有效地拓宽光电器件的光谱范围。

关键词: 材料, 光电特性, 溶胶凝胶法, 钼掺杂氧化锌, 透明导电氧化物

Abstract:

Mo-doped ZnO (MZO) films with different Mo concentration (0~1 at%) were prepared on Al2O3 (0001) substrates by sol-gel spin coating route. It was found that the MZO films with the ZnO hexagonal wurtzite structure were highly c-axis orientation. The electrical properties of the MZO films could be significantly improved by the heat-treatment in vacuum. The resistivity of the films initially decreased with the increase of Mo content and then gradually increased with a further increase of Mo content. The lowest resistivity of 0.13 Ωcm was obtained at a Mo content of 0.4 at.%. The carrier concentration and the Hall mobility were measured and discussed to understand the electrical transport characteristics. The high average transmittance (>85%) in near-infrared region (800~2000 nm) indicates the possible use of MZO films in photoelectric device to widen absorption spectrum range.

Key words: materials, photoelectric properties, sol-gel spin coating method, Mo-doped zinc oxide, transparent conducting oxides

邵景珍董伟伟陶汝华邓赞红周曙方晓东. 溶胶凝胶法制备钼掺杂氧化锌薄膜及性质研究[J]. J4, 2011, 28(2): 247-252.

SHAO Jing-Zhen, DONG Wei-Wei, TAO Ru-Hua, DENG Zan-Hong, ZHOU Shu, FANG Xiao-Dong. Characterization of Mo-doped ZnO thin films prepared by the sol–gel method[J]. J4, 2011, 28(2): 247-252.

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溶胶凝胶法制备钼掺杂氧化锌薄膜及性质研究

Characterization of Mo-doped ZnO thin films prepared by the sol–gel method

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