Al掺杂半导体Mg2Si薄膜的制备及光学带隙研究

量子电子学报

• 半导体光电 • 上一篇

Al掺杂半导体Mg2Si薄膜的制备及光学带隙研究

王善兰1，廖杨芳1，2，房迪1，吴宏仙1，肖清泉1，杨云良1，谢泉1?

1贵州大学大数据与信息工程学院新型光电子材料与技术研究所，贵州贵阳550025； 2 贵州师范大学物理与电子科学学院，贵州贵阳 550001

出版日期:2017-09-28 发布日期:2019-06-13
通讯作者: 谢泉（1964-）贵州贵阳人，博士，教授，主要研究电子材料与器件。 E-mail:qxie@gzn.edu.cn
作者简介:王善兰（1991-），女，四川达州人，研究生，从事半导体材料及器件研究。E-mail:124060649@qq.com
基金资助:
Supported by National Natural Science Foundation of China（国家自然科学基金，61264004)，Natural Science Foundation of Guizhou Province（贵州省自然科学基金，[2014]2052，[2013]2209)，Fund for International Sci-Tech Cooperation Program of Guizhou Province（[2013]7003)，Graduate Innovation Foundation of Guizhou University（2016068)

Preparation and optical band gap of Al doped Mg2Si thin films

WANG Shanlan1, LIAO Yangfang1,2, FANG Di1, WU Hongxian1, XIAO Qingquan1, YANG Yunliang1, XIE Quan1

1 Institute of Advanced Optoelectronic Materials and Technology, College of Big Data and Information Engineering，Guizhou University, Guiyang 550025, China; 2 School of Physics and Electronic Science, Guizhou Normal University, Guiyang 550001, China

Published:2017-09-28 Online:2019-06-13

摘要/Abstract

摘要： 用磁控溅射方法在Si衬底上制备了Al掺杂Mg2Si薄膜，通过X射线衍射仪（XRD）、扫描电镜（SEM）、原子力显微镜（AFM）和分光光度计研究了掺杂含量对Mg2Si薄膜组分、表面形貌、粗糙度及光学带隙值的影响。XRD结果表明随着Al掺杂量的增加，Mg2Si衍射峰先增强后减弱。SEM及AFM结果表明随掺杂量的增加，结晶度先增加后降低，晶粒尺寸减小，粗糙度先增加后降低。得到掺杂后薄膜间接跃迁带隙范围为0.423～0.495 eV，直接跃迁带隙范围为0.72～0.748 eV，掺杂前薄膜间接跃迁带隙和直接跃迁带隙分别为0.53 eV、0.833 eV。

关键词: 材料, Mg2Si薄膜, Al掺杂, 光学带隙, 显微

Abstract: The Al-doped Mg2Si thin films on Si substrates are fabricated by magnetron sputtering method. Influences of doping levels on the compositions, surface topographies, roughness and optical band gap values of Mg2Si thin films are investigated with X-ray diffraction (XRD), scanning electron microscope(SEM), atomic force microscope(AFM) and spectrophotometer. XRD results show that the diffraction peaks of Mg2Si become stronger firstly, and then become weaker with the increase of Al doping amount. SEM and AFM results show that the crystallinity increases first and then decreases, grain size decreases, and the roughness increases first and then decreases with increasing doping level of Al. The indirect transition band gap of the doped films ranges from 0.423 eV to 0.495eV. The direct transition band gap ranges from 0.72 eV to 0.748 eV. The indirect and direct transition band gap are 0.53 eV and 0.833 eV before doping, respectively.

Key words: materials, Mg2Si thin films, Al doping, optical band gap, microscopy

王善兰1，廖杨芳1，2，房迪1，吴宏仙1，肖清泉1，杨云良1，谢泉1?. Al掺杂半导体Mg2Si薄膜的制备及光学带隙研究[J]. 量子电子学报.

WANG Shanlan1, LIAO Yangfang1,2, FANG Di1, WU Hongxian1, XIAO Qingquan1, YANG Yunliang1, XIE Quan1. Preparation and optical band gap of Al doped Mg2Si thin films[J]. Chinese Journal of Quantum Electronics.

参考文献

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Al掺杂半导体Mg2Si薄膜的制备及光学带隙研究

Preparation and optical band gap of Al doped Mg2Si thin films

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