准分子激光线形光束晶化非晶硅薄膜

量子电子学报

准分子激光线形光束晶化非晶硅薄膜

尹广玥1,2,3，游利兵1,3*，陈星1,2,3，邵景珍1,3，陈亮1,2,3，王庆胜1,3，方晓东1,2,3

1中国科学院安徽光学精密机械研究所安徽省光子器件与材料重点实验室，安徽合肥 230031； 2中国科学技术大学，安徽合肥 230026

出版日期:2019-03-28 发布日期:2019-03-20
作者简介:尹广玥（1988—），吉林省通化市人，博士研究生，主要从事激光技术与功能薄膜材料方面的研究。E-mail：378575080@qq.com
基金资助:
Anhui International Cooperation Project (安徽省国际合作项目, 1403062009)

Crystallization of Amorphous Silicon Films Annealed by Line Shape Excimer Laser Beam

Yin Guangyue1,2,3, You Libing1,3*, Chen Xing1,2,3, Shao Jingzhen1,3, Chen Liang1,2,3, Wang Qingsheng1,3, Fang Xiaodong1,2,3

1 Anhui Province Key Laboratory of Photonic Devices and Materials, Anhui Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Hefei 230031, China; 2 University of Science and Technology of China, Hefei 230026, China

Published:2019-03-28 Online:2019-03-20

摘要/Abstract

摘要： 准分子激光线形光束在多晶硅薄膜的工业生产中有重要应用。基于自行研制的激光退火设备输出的线形XeCl准分子激光对等离子体增强化学气相沉积制备的大尺寸非晶硅薄膜进行退火处理。研究了线形光束的能量密度、辐照数量对薄膜晶化程度的影响，讨论了制备的大尺寸多晶硅薄膜的晶化体积分数及均匀性。实验结果表明，薄膜晶化的阈值为194 mJ•cm-2；薄膜的晶化体积分数随能量密度先线性增大，再缓慢减小，线性增长因子约为0.3，当能量密度为432 mJ•cm-2时，晶化程度最优；当辐照数量超过20次时，薄膜的晶化体积分数维持稳定；当光斑搭接率为93.7%时，制备的大尺寸多晶硅薄膜右侧区域的晶化体积分数为92.26%，相对标准差为1.56%，略好于左侧区域。该工作为线形光束晶化非晶硅薄膜的研究及准分子激光线形光束退火设备的国产化及提供了参考。

关键词: 薄膜, 多晶硅, 准分子激光退火, 能量密度, 搭接率, 线形光束

Abstract: The line shape excimer laser beam has been widely used in the industrial production of poly-silicon films. The large size amorphous silicon film prepared by plasma enhanced chemical vapor deposition is annealed by the line shape excimer laser beam output from the self-developed laser annealing equipment. The effects of energy density and irradiation times of the line shape laser beam on the crystallization of amorphous silicon films are researched. The crystallization volume fraction and the uniformity of the acquired large size poly-silicon film are discussed. The experimental results show that the crystallization threshold of the amorphous silicon film is 194 mJ•cm-2. The crystallization volume fraction increases with a linear factor of 0.3 first, and then decreases slowly. When the energy density is 432 mJ•cm-2, the crystallization degree reaches its peak. The crystallization volume fraction keeps stable when the number of irradiation is above 20. The crystallization volume fraction of the acquired large size poly-silicon film is 92.26% with the relative standard deviation of 1.56% in the right region under the overlap ratio of 93.7%, which are slightly better than the left region. This work gives references to the research of amorphous silicon film crystallization annealed by line shape laser beam and the nationalization of the line beam excimer laser annealing equipment.

Key words: thin films, poly-silicon, excimer laser annealing, energy density, overlap ratio, line shape laser beam

尹广玥1,2,3，游利兵1,3*，陈星1,2,3，邵景珍1,3，陈亮1,2,3，王庆胜1,3，方晓东1,2,3. 准分子激光线形光束晶化非晶硅薄膜[J]. 量子电子学报.

Yin Guangyue1,2,3, You Libing1,3*, Chen Xing1,2,3, Shao Jingzhen1,3, Chen Liang1,2,3, Wang Qingsheng1,3, Fang Xiaodong1,2,3. Crystallization of Amorphous Silicon Films Annealed by Line Shape Excimer Laser Beam[J]. Chinese Journal of Quantum Electronics.

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