极紫外光刻掩模成像和缺陷补偿策略研究进展 (封面文章）

doi:10.3969/j.issn.1007-5461.2025.06.001

摘要/Abstract

摘要： 极紫外(EUV)光刻是目前国际上7 nm及其以下技术节点芯片量产的主流光刻技术, 其较高的成像质量是保证光刻系统性能的重要前提, 而光刻掩模的质量又直接影响着系统的成像质量。理想的“零”缺陷光刻掩模实际上是无法制备的, 而缺陷的存在会严重影响曝光成像质量, 因此对EUV光刻掩模缺陷进行补偿是EUV光刻不可或缺的关键技术。为了实现高效和高精度的缺陷补偿, 大量的光刻仿真计算模拟是必不可少的, 其中掩模仿真、系统成像仿真和补偿策略都会对补偿的效率产生影响, 因此探究快速、高精度的掩模仿真模型和系统成像模型具有重要意义。鉴于此, 本文系统梳理了EUV光刻掩模成像仿真算法和掩模缺陷补偿策略, 分析了不同方法的优点和局限性, 并探讨了掩模缺陷补偿策略的发展趋势。

关键词: 光刻技术, 极紫外光刻, 掩模仿真, 缺陷补偿, 成像仿真

Abstract: Extreme ultraviolet (EUV) lithography is currently the mainstream lithography technology for mass production of 7 nm and below technology node chips internationally. Whether it has high imaging quality is an important prerequisite for ensuring the performance of lithography systems, however, the imaging quality of the system is directly affected by the quality of lithography masks. Ideal "zero-defect" lithography masks cannot actually be manufactured, and the presence of defects can seriously affect the quality of exposure imaging. Therefore, compensating for EUV lithography mask defects is an indispensable key technology for EUV lithography. To achieve efficient and high-precision defect compensation, a significant amount of lithography simulation is indispensable. Mask simulation, system imaging simulation, and compensation strategies all have an impact on the efficiency of compensation. Therefore, exploring efficient and high-precision mask simulation models and system imaging models is of great significance. In this regard, this work systematically reviews the mask imaging simulation algorithms and mask defect compensation strategies for EUV lithography, analyzes the advantages and limitations of different methods, and explores the development trend of mask defect compensation strategies.

Key words: lithography, extreme ultraviolet lithography, mask simulation, defect compensation, imaging simulation

中图分类号:

赵敏, 辛颖, 匡尚奇 . 极紫外光刻掩模成像和缺陷补偿策略研究进展 (封面文章）[J]. 量子电子学报, 2025, 42(6): 733-749.

ZHAO Min, XIN Ying, KUANG Shangqi . Research progress on mask imaging and defect compensation strategies for extreme ultraviolet lithography (Cover Paper)[J]. Chinese Journal of Quantum Electronics, 2025, 42(6): 733-749.

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极紫外光刻掩模成像和缺陷补偿策略研究进展 (封面文章）

Research progress on mask imaging and defect compensation strategies for extreme ultraviolet lithography (Cover Paper)

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