4H-SiC表面热氧化生长SiOx薄膜特性的研究

J4 ›› 2010, Vol. 27 ›› Issue (4): 479-484.

4H-SiC表面热氧化生长SiOx薄膜特性的研究

陈厦平¹,朱会丽²,蔡加法¹

1 厦门大学物理系，福建厦门 361005；
2 集美大学理学院，福建厦门 361021

收稿日期:2010-05-10 修回日期:2009-12-21 出版日期:2010-07-28 发布日期:2010-06-13
通讯作者: 陈厦平（1981-），博士，厦门大学物理与机电工程学院工程师，主要从事宽禁带半导体材料薄膜的制备及紫外光电探测器的研制。 E-mail:chenxp@xmu.edu.cn
基金资助:
福建省自然科学基金（2009J05151）

Study of SiOx film grown on 4H-SiC by thermal oxidation

CHEN Xia-ping¹，ZHU Hui-li²，CAI Jia-fa¹

1 Department of Physics, Xiamen University, Xiamen, Fujian 361005, China；
2 School of Science, Jimei University, Xiamen 361021, China)

Received:2010-05-10 Revised:2009-12-21 Published:2010-07-28 Online:2010-06-13

摘要/Abstract

摘要：

采用扫描电子显微镜（SEM）、原子力显微镜（AFM）和X射线光电子能谱（XPS）测试方法对4H-SiC上热氧化生长的氧化硅（SiOx）薄膜表面形貌进行观测，并分析研究SiOx薄膜和SiOx/4H-SiC界面的相关性质，包括拟合Si2p、O1s和C1s的XPS谱线和分析其相应的结合能，以及分析SiOx层中各主要元素随不同深度的组分变化情况，从而获得该热氧化SiOx薄膜的化学组成和化学态结构，并更好地了解其构成情况以及SiOx/4H-SiC的界面性质。

关键词: 材料, SiOx薄膜, 热氧化, X射线光电子能谱, 4H-SiC

Abstract:

The surface morphology of the SiOx film grown on 4H-SiC by thermal oxidation was observed by scanning electron microscope (SEM) and atomic force microscopy (AFM), respectively. The characteristics of the SiOx film and the interface of SiOx/4H-SiC were studied by X-ray photoelectron spectroscopy (XPS). The Gaussian fitting of Si2p, O1s and C1s XPS energy spectrums and the corresponding binding energy were analyzed. The composition variances of the SiOx film were also researched with XPS measurement on the different depth. The result is expected to find out the chemical composition and state of the SiOx film grown on 4H-SiC by thermal oxidation, and to obtain the characteristic of the SiOx/4H-SiC interface.

Key words: materials, SiOx film, thermal oxidation, X-ray photoelectron spectroscopy, 4H-SiC

陈厦平朱会丽蔡加法. 4H-SiC表面热氧化生长SiOx薄膜特性的研究[J]. J4, 2010, 27(4): 479-484.

CHEN Xia-ping，ZHU Hui-li，CAI Jia-fa. Study of SiOx film grown on 4H-SiC by thermal oxidation[J]. J4, 2010, 27(4): 479-484.

参考文献

[1] Zhu H L, Chen X P, and Wu Z Y. A study of p-type Ohmic contact for 4H-SiC avalanche photodetector [J]. Chinese Journal of Quantum Electronics (量子电子学报), 2007, 24(6): 743-747 (in Chinese).
[2] Zhan Y L, Yang Y T. Key Techniques for Silicon Carbide Semiconductor Devices and Integrated Circuits [J]. Microelectronics (微电子学), 2001, 31: 233-238 (in Chinese).
[3] Yan F, Xin X B, Aslam S, Zhao Y G, Franz D, Zhao J H, and Weiner M. 4H-SiC UV Photo Detectors With Large Area and Very High Specific Detectivity [J]. IEEE J. Quantum Electron., 2004, 40: 1315-1320.
[4] Chen X P, Zhu H L, Cai J F, and Wu Z Y. High-performance 4H-SiC-based ultraviolet p-i-n photodetector [J]. J. Appl. Phys., 2007, 102: 024505.
[5] Afanas’ev V V, Stesmans A, Cheong K Y, et al. Mechanisms responsible for improvement of 4H-SiC/SiO2 interface properties by nitridation [J]. Appl. Phys. Lett., 2003, 82(427): 558.
[6] Soares G V, Radtke C, Baumvol I J R, et al. Morphological and compositional changes in the SiO2/SiC interface region induced by oxide thermal growth [J]. Appl. Phys. Lett., 2006, 88(4): 041901.
[7] Wang D J, Zhao L, Zhu Q Z, et al. A Transition Region Study of SiO2/4H-SiC Interface by ADXPS [J]. Journal of Semiconductors (半导体学报), 2008, 29(5): 944-949 (in Chinese).
[8] Hazra S, Chakraborty S, and Lai P T. Density profiles and electrical properties of thermally-grown oxide nanofilms on p-type 6H-SiC(0001) [J]. Appl. Phys. Lett., 2004, 85: 5580.
[9] Morrison D J, Pidduck A J, Moore V, et al. Surface preparation for Schottky metal-4H-SiC contacts formed on plasma-etched SiC [J]. Semicond. Sci. Technol., 2000, 15(12): 1107-1114.
[10] Semiconductor Physics Lab of Xiamen Univ. Process Principles of Semiconductor Devices (半导体器件工艺原理) [M]. People's Education Press, 1977, 35-47 (in Chinese).
[11] John F. Moulder, William F. Stickle, et al. Handbook of X-ray Photoelectron Spectroscopy [M]. Physical Electronics Inc., 1995.
[12] Viard J, Beche E, Perarnau D, et al. XPS and FTIR Study of Silicon Oxynitride Thin Films [J]. Journal of the European Ceramic Society, 1997, 17: 2025-2028.
[13] Virojanadara C and Johansson L I. Photoemission study of Si-rich 4H-SiC surfaces and initial SiO2/SiC interface formation [J]. Physical Review B, 2005, 71: 195335.
[14] Hijikata Y, Yaguchi H, Yoshikawa M, et al. Composition analysis of SiO2/SiC interfaces by electron spectroscopic measurements using slope-shaped oxide films [J]. Appl. Surf. Sci., 2001, 184: 161-166.
[15] Ekoue A, Renault O, Billon T, et al. Study of the Wet Re-Oxidation Annealing of SiO2/4H-SiC(0001) Interface Properties by AR-XPS Measurements [J]. Mater. Sci. Forum, 2003, 433-436: 555-558.