4H-SiC紫外光电探测器光电特性随温度变化的研究

J4 ›› 2011, Vol. 28 ›› Issue (6): 737-741.

4H-SiC紫外光电探测器光电特性随温度变化的研究

郑云哲^1,2, 林冰金¹, 张明昆^1,3, 蔡加法^1,2, 陈厦平^1,2, 吴正云^1,3

1 厦门大学物理系, 福建厦门 361005;
2 福建省半导体材料及应用重点实验室, 福建厦门 361005;
3 厦门大学萨本栋微纳米技术研究中心, 福建厦门 361005

收稿日期:2010-12-14 修回日期:2011-03-15 出版日期:2011-11-28 发布日期:2011-11-14
通讯作者: 吴正云（1957- ) 福建人，博士生导师，主要从事纳米低维半导体材料及器件的研制和光电性质的研究。 E-mail:zhywu@xmu.edu.cn
作者简介:郑云哲（1984- ），女，河北人，研究生，主要从事宽禁带半导体材料与光电器件的研究。 Email:zhengyunzhe@126.com
基金资助:
福建省自然科学基金项目(2009J05151)

Photoelectric properties of 4H-SiC UV photodetector at various temperatures

ZHENG Yun-zhe^1,2, LIN BING-jin¹, ZHANG Ming-kun^1,3, CAI Jia-fa^1,2, Chen Xia-pin^1,2, WU Zheng-yun^1,3

1 Department of Physics, Xiamen University, Xiamen 361005, China;
2 Fujian Key Laboratory of Semiconductor Materials and Application, Xiamen 361005, China;
3 Pen-Tung Sah Micro-Nano Technology Research Center, Xiamen University, Xiamen 361005, China

Received:2010-12-14 Revised:2011-03-15 Published:2011-11-28 Online:2011-11-14

摘要/Abstract

摘要：

利用光电流谱法研究了300K到60K温度范围内的p-i-n结构4H-SiC紫外光电探测器的暗电流及相对光谱响应特性。研究发现随着温度的降低，探测器的暗电流和相对光谱响应都逐渐减小；而且，反向偏压越高，暗电流减小的速率越大。在零偏压下，随着温度的降低，器件的温度从300K降低到60K时，相对光谱响应的峰值波长先向短波方向移动，后向长波方向移动，在60K时移至从272nm附近移至282nm附近；同时观察到探测器的相对光谱响应范围略有缩小，。此外，我们对器件并讨论了温度变化对器件p、i、n各层产生的光电流随温度变化的机理进行讨论，提出了可以通过减少i层缺陷和适当减小n层的掺杂浓度的方式来提高器件的相对光谱响应。

关键词: 光电子学, 4H-SiC, p-i-n紫外光电探测器, 温度特性, 光电特性

Abstract:

The dark current and relative spectral response of 4H–SiC ultraviolet p-i-n photodetector had been investigated with the temperature decreasing from 300 K to 60 K by photocurrent measurement. It is found that the dark current and relative spectral response of the device declined during the whole period and that the higher the reverse bias voltage is, the faster the falling rate of dark current are. At the reverse bias of 0V, when the temperature dropped, the peak response wavelength of the device firstly shifted slowly to the short wavelength direction and then moved to the opposite direction, reaching around 282 nm at 60 K. Meanwhile, a littie narrowing of relative spectral response of the device was observed. Furthermore, the mechanism of influences of temperature on photocurrent produced in p, i, n layers had been investigated, and proposal that lessening defect in i layer and reducing properly doping concentration in n layer were proposed to enhance the relative spectral response of the device.

Key words: optoelectronics, 4H-SiC, p-i-n UV photodetector, temperature dependence, photoelectric properties

中图分类号:

O472.3

郑云哲林冰金张明昆蔡加法陈厦平吴正云. 4H-SiC紫外光电探测器光电特性随温度变化的研究[J]. J4, 2011, 28(6): 737-741.

ZHENG Yun-zhe, LIN BING-jin, ZHANG Ming-kun, CAI Jia-fa, Chen Xia-pin, WU Zheng-yun. Photoelectric properties of 4H-SiC UV photodetector at various temperatures[J]. J4, 2011, 28(6): 737-741.

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