GaInAsP /InP阶梯量子阱中氢施主杂质束缚能

J4 ›› 2013, Vol. 30 ›› Issue (2): 236-242.

GaInAsP /InP阶梯量子阱中氢施主杂质束缚能

尹新¹,王海龙²,龚谦¹,³,封松林¹,³

1 曲阜师范大学物理工程学院，山东曲阜 273165； 2 中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室，上海 200050

收稿日期:2012-02-14 修回日期:2012-03-05 出版日期:2013-03-28 发布日期:2013-03-14
通讯作者: 王海龙（1971－）山东省莘县人，博士，教授，主要从事光通信与半导体光电子学方面的研究。 E-mail:hlwang@mail.qfnu.edu.cn
作者简介:尹新（1986－），女，山东省潍坊市人，研究生,主要从事低维半导体纳米结构电子态的研究。E-mail: yinxinbeauty@163.com
基金资助:
国家自然科学基金( 60976015)，山东省自然科学基金 ( ZR2010FM023)以及信息功能材料国家重点实验开放课题资助

Binding energy of hydrogenic donor impurity in GaInAsP /InP stepped quantum well

1 College of Physics and Engineering, Qufu Normal University, Qufu 273165, China； 2 State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

Received:2012-02-14 Revised:2012-03-05 Published:2013-03-28 Online:2013-03-14

摘要/Abstract

摘要： 在有效质量近似下，利用变分法对GaxIn1-xAsyP1-y /InP阶梯量子阱中氢施主杂质束缚能进行了理论计算，并研究了外加电场和阶梯阱的高度对阶梯量子阱中氢施主杂质电子态特性的影响。计算结果显示当施主杂质位于阶梯量子阱的中心时，束缚能达到最大值；外加电场使得电子波函数从阱中心偏移，引起束缚能的非对称分布；Ga 与 As组分的变化使得阶梯阱的势能高度发生变化，从而明显的影响阱中氢杂质束缚能。计算结果对一些基于半导体阶梯型量子阱的光电子器件的设计制作有一定的指导意义。

关键词: 光电子学, 束缚能, 变分法, 氢施主杂质, 阶梯量子阱

Abstract: Within the framework of effective mass approximation, the binding energy of a hydrogenic donor impurity in GaxIn1-xAsyP1-y stepped quantum wells (SQWs) is theoretically calculated using the variational method. The influence of applied electric fields and SQWs height on hydrogenic donor impurity electronic state are investigated. The results show that the hydrogen impurity binding energy reaches its maximum when the donor impurity is located at the center of the stepped quantum wells. The applied electric fields drive the electron wave function away from the stepped quantum well center, and induce asymmetric distribution of the donor binding energy in the SQWs. The variation of Ga and As content leads to the corresponding changes in the stepped quantum well height, which significantly affects the binding energy of hydrogenic impurities in the stepped quantum wells. The results are meaningful and can be applied in the design of optoelectronic devices based on stepped quantum wells.

Key words: optoelectronics, binding energy, variational method, hydrogenic donor impurity, stepped quantum well

中图分类号:

O471.1

尹新王海龙龚谦封松林. GaInAsP /InP阶梯量子阱中氢施主杂质束缚能[J]. J4, 2013, 30(2): 236-242.

参考文献

[1] Zhao Hongping and Tansu Nelson. Optical gain characteristics of staggered InGaN quantum wells lasers. [J]. Appl. Phys. Lett., 2010, 107：113110. [2] Li H, Simeon Katz, Gerhard Boehm, and Markus-Christian Amann. Broad gain bandwidth injectorless quantum-cascade lasers with a step well design [J]. Appl. Phys. Lett., 2011, 98: 131113. [3] Scalari Giacomo, Amanti Maria I, Fischer Milan, Terazzi Romain, Walther Christoph, et al. Step well quantum cascade laser emitting at 3 THz. [J]. Appl. Phys. Lett., 2009,94: 041114. [4] Machhadani H, Kotsar Y, Sakr S, Tchernycheva M , Colombelli R, et al.Terahertz intersubband absorption in GaN/AlGaN step quantum well [J]. J. Appl. Phys., 2010, 97: 191101. [5] Arif Ronald A, Zhao Hongping, Ee Yik-Khoon, and Tansu Nelson. Spontaneous Emission and Characteristics of Staggered InGaN Quantum-Well Light-Emitting Diodes., [J]. 2008, 44 (6): 573-580. [6] Xia C X, Jiang F C, Wei S Y, et al. Hydrogenic impurity in zinc-blende GaN/AlGaN quantum dot [J]. Microelectr. J., 2007, 38 (6-7): 663-666. [7] Garayt J.P, Gerard J.M, Enjalbert F, Ferlazzo L, Founta S, Martinez-Guerrero E, Rol F, Araujo D, Cox R, Daudin B, Gayral B, Dang Le Si and Mariette H. Study of isolated cubic GaN quantum dots by low-temperature cathodoluminescence [J]. Physica E., 2005, 26 (1-4):203-206. [8] Zhu Hai-Yan, Zhang Tong-Yi, and Zhao Wei. Intersubband optical absorption in a step asymmetric semiconductor quantum well driven by a terahertz field [J]. J. Appl. Phys., 2009, 105: 043518. [9] Lim A. C, Gupta R, Haywood S. K, Steer M. J, Hopkinson M, et al. Electric field induced blueshift of the e1-hh1 exciton transition in a GaAs1-xNx/GaAs (x<1%) stepped quantum well [J]. Appl. Phys. Lett., 2006, 89: 261110. [10] Li S.S and Xia J.B. Electronic states of a hydrogenic donor impurity in semiconductor nano-structures [J]. Phys. Lett. A., 2007, 366 (1-2): 120-123. [11] Go fusheng, Zhao hua, Zhu mengzhao, Li wei. Interface effects on the banding energy levels of hydrogenic impurities in quantum dot heterostructures [J]. Chinese Journal of Quantum Electronics (量子电子学报), 2007, 24(6): 722-726 (in Chinese). [12] Vartanian A.L, Yeranosyan M.A and Kirakosyan A.A. Electron–phonon effect on the ground-state binding energy of hydrogenic impurity in quantum-well wire in presence of an electric field [J]. Physica B-Condes. Matter., 2007, 390 (1-2): 256-162. [13] Jiang Li-Ming, Wang Hai-Long, Wu Hui-Ting; Electronic states of a shallow hydrogenic donor impurity in different shaped semiconductor quantum wells [J]. Communications in Theoretical Physics. 2009, 51(6): 1135. [14] Narayani V and Sukumar B. Polarizability of a shallow donor in a quantum well wire- geometric effects [J]. Solid State Commun., 1994, 90 (9): 575-579. [15] Duque C.A, Montes A, Morales A.L and Porras-Montenegro N. Effects of an applied electric field on the binding energy of shallow donor impurities in GaAs low-dimensional systems [J]. J. Phys.: Condes. Matter., 1997, 9 (27): 5977. [16] Ulas M, Akbas H and Tomak M. Shallow donors in a quantum well wire: Electric field and geometrical effects [J]. Phys., 1998, 22 (1): 369-375. [17] Wu Hui-Ting, Wang Hai-Long, Jiang Li-Ming. The electric field effect on binding energy of hydrogenic impurity in zinc-blende GaN/AlxGa1-xN spherical quantum dot [J]. Physica B., 2009, 404 (1): 122–126. [18] Aktas S, Boz F.K and Dalg?c S.S. Electric and magnetic field effects on the binding energy of a hydrogenic donor impurity in a coaxial quantum well wire [J]. Physica E., 2005, 28 (1):96-105. (5)--[19] Kasapoglu E, Sari H, Sokmen I. Shallow donor impurities in different shaped double quantum wells under the hydrostatic pressure and applied electric field [J]. Physica B: Condensed Matter., 2005, 362 (1-4): 56-61. (6)--[20] Kasapoglu E. Binding energy of donor impurities in double inverse parabolic quantum well under electric field [J]. Physica E: Low-dimensional Systems and Nanostructures., 2009, 41 (7): 1222-1225. (7)--[21] Liang Shijun, Xie Wenfang, Li Xiaofeng, Shen Huaya. Photoionization and binding energy of a donor impurity in a quantum dot under an electric field: Effects of the hydrostatic pressure and temperature [J]. Superlattices and Microstructures. 2011, 49 (6): 623-631. [22]Paul Harrison. Quantum Wells, Wires and Dots, Second Edition [M]. England: John Wiley and Sons Ltd, Chichester, 2009. 1-168． (8)--[23] Barseghyan M.G, Hakimyfard Alireza, Kirakosyan A.A, Mora-Ramos M.E, Duque C.A. Hydrostatic pressure and electric and magnetic field effects on the binding energy of a hydrogenic donor impurity in InAs P?schl–Teller quantum ring [J]. Superlattices and Microstructures., 2012, 51 (1): 119-127. [24] Zhou dongmei, Su chunyan. Effect of built-in electric field and impurity on binding energy of cylindrical quantum dot with two electron [J]. Chinese Journal of Quantum Electronics (量子电子学报), 2011, 28(1): 96-103 (in Chinese).