J4 ›› 2015, Vol. 32 ›› Issue (6): 673-677.

• 激光技术与器件 • 上一篇    下一篇

KrF脉冲激光退火制备锐钛矿TiO2薄膜

张自锋 张志威 洪荣墩 陈厦平 吴正云   

  1. 厦门大学物理系,福建 厦门 361005
  • 收稿日期:2015-04-10 修回日期:2015-05-09 出版日期:2015-11-28 发布日期:2015-11-05
  • 通讯作者: 吴正云 (1957-)福建人, 博士生导师, 主要从事低维纳米半导体材料及器件的研制和光电性质的研究. E-mail:zhywu@xmu.edu.cn
  • 作者简介:张自锋 (1986-) 安徽人, 博士生, 主要从事宽禁带半导体和光电器件的研究. E-mail: chuzhouxiadahao@163.com
  • 基金资助:

    国家自然科学基金资助项目(61176049 & 61307047)

Fabrication of anatase TiO2 by KrF pulse laser annealing

ZHANG Zi-feng, ZHANG Zhi-wei, HONG Rong-dun, CHEN Xia-ping, WU Zheng-yun*   

  1. Department of Physics, Xiamen University, Xiamen 361005,  China
  • Received:2015-04-10 Revised:2015-05-09 Published:2015-11-28 Online:2015-11-05

摘要:

在常温下,用射频磁控溅射在石英衬底上沉积厚度约为200 nm 的TiO2薄膜,然后使用波长为248 nm 的KrF脉冲激光器,在不同功率密度下对薄膜样品进行辐照退火处理,并采用X射线衍射(XRD)、拉曼(Raman)、X射线电子能谱(XPS)、原子力显微镜(AFM)、扫描电子显微镜(SEM)、高分辨率扫描隧道显微镜(HRTEM)以及选择区域电子衍射(SAED)、紫外可见分光光度计等方法分析不同激光功率密度退火对TiO2薄膜的结构、表面形貌和透射率等性能的影响。结果表明当激光功率密度为0.5 J/cm2时,可获得高质量的锐钛矿TiO2薄膜,当继续增大光功率密度时,TiO2薄膜变为(1 1 0)取向的金红石相,其薄膜表面粗糙度也相应增大。

关键词: KrF, 脉冲激光, 半导体, TiO2, 光学特性

Abstract:

TiO2 thin films of ~200 nm were prepared by RF magnetron sputtering on quartz substrates at room temperature, and then annealed by a KrF pulse laser with wavelength 248 nm under different power densities in the air. The effect of laser power density on the characteristics of films was systematically analyzed using X-ray diffractometry (XRD), Raman spectral, X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), atom force microscopy (AFM), High resolution transmission electron microscopy (HRTEM) and selected area electron diffraction (SAED) and UV-vis spectrophotometer. The results showed that high-quality anatase TiO2 films can be obtained when the power density was 0.5 J/cm2. By increasing the power density continually, TiO2 showed the predominant orientation with rutile phase along (1 1 0) reflection, with the roughness of the films increasing.

Key words: KrF, pulse laser, semiconductor, TiO2, optical property

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