梯度掺杂GaN光电阴极的光谱响应测试与分析

J4 ›› 2017, Vol. 34 ›› Issue (1): 99-105.

梯度掺杂GaN光电阴极的光谱响应测试与分析

李飙¹,常本康²,陈文聪¹

1商丘师范学院物理与电气信息学院, 河南商丘 476000； 2南京理工大学电子工程与光电技术学院，江苏南京 210094

收稿日期:2015-10-13 修回日期:2015-12-03 出版日期:2017-01-28 发布日期:2017-01-28
通讯作者: 李飙（1974－），河南太康人，博士，讲师。主要研究方向为光电器件性能检测与评估。 E-mail:libiao2006@126.com
基金资助:
Supported by National Natural Science Foundation of China(国家自然科学基金, 61171042)

Spectral response measurement and analysis of gradient-doping GaN photocathode

LI Biao1，CHANG Benkang2，CHEN Wencong1

1 School of Physics and Electrical Information, Shangqiu Normal University, Shangqiu 476000, China; 2 Institute of Electronic Engineering and Optoelectronic Technology, Nanjing University of Science and Technology, Nanjing 210094, China

Received:2015-10-13 Revised:2015-12-03 Published:2017-01-28 Online:2017-01-28

摘要/Abstract

摘要： 用光谱响应测试仪得到了反射式梯度掺杂GaN光电阴极在激活和衰减过程中的光谱响应曲线，发现此曲线不断发生变化。在激活过程中光谱响应不断提高，且长波响应提高较快；衰减过程中光谱响应不断下降，长波响应下降得更快。结果表明：光谱响应曲线的变化与光电阴极高能光电子的逸出有关。GaN光电阴极发射的电子能量分布随入射光子能量升高而向高能端偏移，阴极表面势垒形状的变化对低能光激发电子的影响更大，导致光谱响应曲线随入射光波长改变而产生了不同的变化。

关键词: 光电子学；光谱响应曲线；氮化镓；光电阴极；电子能量分布；表面势垒

Abstract: The spectral response curves of reflection-type gradient-doping GaN photocathode in the process of activation and attenuation are obtained with the spectral response measurement instrument. It’s found that the curve is constantly changing. The spectral response improves continuously in the process of activation, and the long wave response increases faster. The spectral response decreases continuously in the process of attenuation, and the long wave response decreases faster. Results show that the variation of spectral response curve is related to the escape of the high energy photoelectron of photoelectric cathde. The electron energy distribution of GaN photocathode is shifted to the high energy side with increasing of the incident photon energy. Influence of cathode surface potential barrier shape change on low energy light excited electrons is even greater, which leads to different change in spectral response curve with incident light wavelength.

Key words: optoelectronics; spectral response curves; GaN; photocathode; electron energy distribution; surface potential barrier

李飙常本康陈文聪. 梯度掺杂GaN光电阴极的光谱响应测试与分析[J]. J4, 2017, 34(1): 99-105.

LI Biao1，CHANG Benkang2，CHEN Wencong1. Spectral response measurement and analysis of gradient-doping GaN photocathode[J]. J4, 2017, 34(1): 99-105.

参考文献

[1] Siegmund O, Vallerga J, Mcphate J, et al. Development of GaN photocathodes for UV detectors[J]. Nucl. Instrum. Methods Phys. Res., Sect. A, 2006, 567: 89-92.
[2] Razeghi M, Rogalski A. Semiconductor Ultraviolet Detectors[J]. J. Appl. Phys., 1996, 79(10): 7433-7473.
[3] Liu Z. Surface characterization of semiconductor photocathode structures[D]. Stanford: Stanford University, 2005.
[4] Li Jun, Fan Guanghan, Yang Hao, et al. Impaction of the interfacial layer on leakage current of LED[J]. Chinese Journal of Quantum Electronics (量子电子学报), 2008, 25(5): 615 (in Chinese).
[5] Zheng Dongmei, Wang Zongchi. Interband optical transitions due to ionized acceptor bound excitons in wurtzite GaN strained cylindrical quantum dot[J]. Chinese Journal of Quantum Electronics (量子电子学报), 2012, 29(4): 385 (in Chinese).
[6] Dabiran A M, Wowchak A M, Chow P P, et al. Direct deposition of GaN-based photocathodes on microchannel plates[C]. SPIE, 2009, 7212: 721213.
[7] Tripathi N, Bell L, Nikzad S, et al. Novel Cs-Free GaN Photocathodes[J]. J. Electron. Mater., 2011, 40(4):382-387.
[8] Qiao Jianliang, Tian Si, Chang Benkang, et al. Study of Activation Mechanism for NEA GaN Photocathode[J]. Acta Physica Sinica (物理学报), 2009, 58(8): 5847-5851 (in Chinese).
[9] Chang B K, Du X Q, Liu L, et al．The automatic recording system of dynamic spectral response and its applications[C]. SPIE, 2003, 5209: 209-218.
[10] Spicer W E, Herrera G A. Modern theory and application of photocathodes[C]. SPIE, 1993, 2022: 18-33.
[11] Qiao Jianliang, Chang Benkang, Qian Yunsheng, et al. Quantum efficiency recovery of reflection-mode NEA GaN photocathode[J]. Acta Physica Sinica (物理学报), 2011, 60(1): 017903 (in Chinese).
[12] Zong Z Y, Qian Y S, Chang B K. Analysis of on-line measured spectral responses of NEA photocathodes[C]. SPIE, 2001, 4580: 623-631.
[13] Qian Yunsheng, Zong Zhiyuan, Chang Benkang. On line Measurement of Spectral Response of GaAs Photocathodes[J]. Journal of Vacuum Science and Technology (真空科学与技术), 2000, 20(5): 305-307 (in Chinese).
[14] Liu Z, Machuca F, Pianetta P, et al. Electron scattering study within the depletion region of the GaN(0001) and the GaAs (100) surface[J]. Appl. Phys. Lett., 2004, 85(9): 1541-1543.
[15] Qiao Jianliang, Chang Benkang, Du Xiaoqing, et al. Quantum efficiency decay mechanism for reflection mode negative electron affinity GaN photocathode[J]. Acta Physica Sinica (物理学报), 2010, 59(4): 2855-2859 (in Chinese).
[16] Qiao Jianliang, Niu Jun, Yang Zhi, et al. Study of NEA GaN photocathode surface model[J]. Optical Technique (光学技术), 2009, 35(1): 145-151 (in Chinese).