Ta5+、Nb5+ 掺杂-Ga2O3 单晶
光电性质研究进展

量子电子学报 ›› 2021, Vol. 38 ›› Issue (2): 219-227.

• “先进光学晶体”专辑 • 上一篇下一篇

Ta5+、Nb5+ 掺杂-Ga2O3 单晶光电性质研究进展

王超1;2, 赛青林1∗, 齐红基1∗

1 中国科学院上海光学精密机械研究所高功率激光材料重点实验室, 上海201800; 2 中国科学院大学, 北京100049

收稿日期:2020-10-21 修回日期:2020-11-06 出版日期:2021-03-28 发布日期:2021-03-29
通讯作者: E-mail: saiql@siom.ac.cn; qhj@siom.ac.cn E-mail:qhj@siom.ac.cn
作者简介:王超( 1996 - ), 河北石家庄人, 研究生, 主要从事氧化镓单晶制备及性能方面的研究。E-mail: carloswangc@foxmail.com
基金资助:
Supported by National Natural Science Foundation of China (国家自然科学基金, 51802327, 51972319)

Research progress on photoelectric properties of Ta5+ and Nb5+ doped -Ga2O3 single crystals

WANG Chao1;2, SAI Qinglin1∗, QI Hongji1∗

1 Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China; 2 University of Chinese Academy of Sciences, Beijing 100049, China

Received:2020-10-21 Revised:2020-11-06 Published:2021-03-28 Online:2021-03-29

摘要/Abstract

摘要： -Ga2O3 作为宽禁带半导体材料, 以其优越的光学性质、电学性质和广阔的应用前景近年来受到国内外学者的广泛关注。基于本研究团队在如何制备-Ga2O3 单晶及如何通过掺杂五族离子实现对-Ga2O3 单晶电学性质及光学性质的调控两个重要课题上的深入研究, 对-Ga2O3 单晶的制备方法、Ta5+ 与Nb5+ 掺杂-Ga2O3 单晶的电学性质及光学性质进行了综述。

关键词: 材料, -Ga2O3 单晶, 制备方法, 光学性质, 电学性质

Abstract: As a wide band gap semiconductor material, -Ga2O3 has attracted wide attention from domestic and foreign scholars in recent years due to its superior optical properties, electrical properties and broad application prospects. Based on the in-depth research of our team on the two important topics of how to prepare -Ga2O3 single crystals and how to control the electrical and optical properties of - Ga2O3 single crystals by doping with group V ions, the preparation methods of -Ga2O3 single crystals, the electrical and optical properties of Ta5+ and Nb5+ doped -Ga2O3 single crystals are reviewed.

Key words: material, -Ga2O3 single crystal, preparation method, optical properties, electrical properties

中图分类号:

O734+.3

王超, 赛青林∗, 齐红基∗. Ta5+、Nb5+ 掺杂-Ga2O3 单晶光电性质研究进展[J]. 量子电子学报, 2021, 38(2): 219-227.

WANG Chao, SAI Qinglin∗, QI Hongji∗. Research progress on photoelectric properties of Ta5+ and Nb5+ doped -Ga2O3 single crystals[J]. Chinese Journal of Quantum Electronics, 2021, 38(2): 219-227.

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Ta5+、Nb5+ 掺杂-Ga2O3 单晶光电性质研究进展

Research progress on photoelectric properties of Ta5+ and Nb5+ doped -Ga2O3 single crystals

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Ta5+、Nb5+ 掺杂 -Ga2O3 单晶 光电性质研究进展

Research progress on photoelectric properties of Ta5+ and Nb5+ doped -Ga2O3 single crystals

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Ta5+、Nb5+ 掺杂-Ga2O3 单晶光电性质研究进展