量子电子学报 ›› 2023, Vol. 40 ›› Issue (2): 275-281.doi: 10.3969/j.issn.1007-5461.2023.02.009

• “太赫兹物理、器件与应用”专辑 • 上一篇    下一篇

基于 GaAs 表面等离子体栅阵结构 的太赫兹调制器

汪辰宇♯ , 廖 宇♯ , 梅志杰, 刘旭东, 孙怡雯∗   

  1. ( 深圳大学医学部生物医学工程学院, 广东 深圳 518000 )
  • 收稿日期:2022-10-09 修回日期:2022-11-29 出版日期:2023-03-28 发布日期:2023-03-28
  • 通讯作者: ywsun@szu.edu.cn E-mail:ywsun@szu.edu.cn
  • 作者简介:汪辰宇 ( 1997 - ), 天津人, 研究生, 主要从事太赫兹调制器件方面的研究。 E-mail: 215340655@qq.com 廖 宇 ( 1996 - ), 湖南衡阳人, 研究生, 主要从事太赫兹成像器件方面的研究。 E-mail: 1738704996@qq.com
  • 基金资助:
    国家自然科学基金 (61975135), 广东省自然科学基金 (2019A1515010869)

A terahertz modulator based on GaAs surface plasma grating array structure

WANG Chenyu ♯ , LIAO Yu ♯ , MEI Zhijie, LIU Xudong, SUN Yiwen ∗   

  1. ( Department of Biomedical Engineering, Medical School, Shenzhen University, Shenzhen 518000, China )
  • Received:2022-10-09 Revised:2022-11-29 Published:2023-03-28 Online:2023-03-28

摘要: 太赫兹波具有载频高、带宽大、频谱信息丰富等特点, 其在高速通信、分子检测和生物医学成像等领 域的潜力已得到广泛关注。太赫兹调制器是太赫兹检测系统中的关键器件, 但是当前已报道的调制器都不能同 时具备高效、高速、低插入损耗等特点。因此, 提出并设计了一种基于 GaAs 肖特基二极管结合表面等离子体 栅阵结构的电控太赫兹调制器。该器件将谐振腔和金属栅阵的电场增强效应相互叠加, 大幅提升了器件的调制 性能, 实现了 0.4∼1.4 THz 范围内多频点调制, 最高调制深度约为 80%, 插入损耗低于 10 dB,调制速度大于 100 kHz。

关键词: 光电子学, 太赫兹调制器, 金属栅阵结构, 肖特基二极管

Abstract: Due to its high carrier frequency, large bandwidth and rich spectral information, terahertz waves have been widely concerned for their potential in high-speed communication, molecular detection, and biomedical imaging. Terahertz modulator is a key device in terahertz detection system, but the currently reported modulators cannot have the characteristics of high efficiency, high speed and low insertion loss at the same time. Therefore, an electronically controlled terahertz modulator based on a GaAs Schottky diode combined with a surface plasma gate array structure is proposed and designed. The device superimposes the electric field enhancement effects of the resonant cavity and the metal gate array on each other, which significantly improves the modulation performance of the device and achieves multi-frequency modulation in the range of 0.4 to 1.4 THz with a maximum modulation depth of about 80%, insertion loss lower than 10 dB, and modulation speed greater than 100 kHz.

Key words: optoelectronics, terahertz modulator, metal grid structure, Schottky diode

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