Chinese Journal of Quantum Electronics ›› 2022, Vol. 39 ›› Issue (4): 632-643.doi: 10.3969/j.issn.1007-5461.2022.04.019

• Semiconductor Opto-electronics • Previous Articles     Next Articles

Fr¨ohlich electron-phonon interaction Hamiltonian in GaN nanowires with triangular cross-section

Zhang Li1∗, Wang Qi2   

  1. (1 School of Intelligent Manufacturing, Guangzhou Panyu Polytechnic, Panyu 511483, China; 2 Dongguan Institute of Opto-Electronics, Peking University, Dongguan 523808, China)
  • Received:2021-07-12 Revised:2021-08-27 Published:2022-07-28 Online:2022-07-28

Abstract: Polar optical phonon modes in wurtzite GaN nanowires with equilateral triangular crosssection are deduced and analyzed by using the dielectric continuum model. It is found that the frequency of exactly confined (EC) modes in the GaN nanowire systems is the characteristic frequency (ωz,L) of longitudinal-optical phonons in free z-direction, which is obviously different from the case of EC modes in wurtzite GaN-based quantum wells due to their different confined dimensions. Then by using the method of nonseparable variables, the Laplace equation of the electrostatic potential of the nanowire structure is solved, the exact analytical phonon states of EC modes are obtained, and the polarization eigenvectors and their orthogonal relations, the free phonon field, as well as the corresponding Fr¨ohlich electron-phonon interaction Hamiltonian for the EC phonon modes are also derived. Finally, the numerical calculation on GaN nanowire is performed, the electron-phonon coupling functions are depicted and discussed, the symmetries and coupling strength of the coupling functions are analyzed in detail, and some meaningful conclusions are drawn.

Key words: optoelectronics, electron-phonon interaction, polar optical phonon, GaN nanowire, triangular cross-section

CLC Number: