Abstract: In order to meet the demand of highly integrated RF transceiver link in terahertz communication and imaging systems, a precise model of the device is established on the basis of the selfdeveloped terahertz Schottky diode, and then a frequency doubling/mixing monolithic integrated chip based on diode is designed and fabricated, which solves the problems of difficult assembly and poor consistency of traditional diode, and improves the performance of the device. The 170 GHz, 340 GHz frequency multiplier and 340 GHz mixer modules are successfully developed, and then the integrated 340 GHz transmitting and receiving links are further developed. The integrated module of the transmitter realizes the output of 342 GHz with a power of 22 mW, and the integrated module of the receiving end realizes a frequency conversion loss of 10 dB up or down at 330-350 GHz single sideband. The development of the module lays the foundation for the future application of terahertz communication and imaging technology.

Key words: semiconductor device, terahertz Schottky diode, frequency multiplier, mixer, transceiver link