Research progress on mask imaging and defect compensation strategies for extreme ultraviolet lithography (Cover Paper)

doi:10.3969/j.issn.1007-5461.2025.06.001

Abstract

Abstract: Extreme ultraviolet (EUV) lithography is currently the mainstream lithography technology for mass production of 7 nm and below technology node chips internationally. Whether it has high imaging quality is an important prerequisite for ensuring the performance of lithography systems, however, the imaging quality of the system is directly affected by the quality of lithography masks. Ideal "zero-defect" lithography masks cannot actually be manufactured, and the presence of defects can seriously affect the quality of exposure imaging. Therefore, compensating for EUV lithography mask defects is an indispensable key technology for EUV lithography. To achieve efficient and high-precision defect compensation, a significant amount of lithography simulation is indispensable. Mask simulation, system imaging simulation, and compensation strategies all have an impact on the efficiency of compensation. Therefore, exploring efficient and high-precision mask simulation models and system imaging models is of great significance. In this regard, this work systematically reviews the mask imaging simulation algorithms and mask defect compensation strategies for EUV lithography, analyzes the advantages and limitations of different methods, and explores the development trend of mask defect compensation strategies.

Key words: lithography, extreme ultraviolet lithography, mask simulation, defect compensation, imaging simulation

CLC Number:

ZHAO Min, XIN Ying, KUANG Shangqi . Research progress on mask imaging and defect compensation strategies for extreme ultraviolet lithography (Cover Paper)[J]. Chinese Journal of Quantum Electronics, 2025, 42(6): 733-749.

References

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