Intersubband transitions in β⁃(AlxGa1 - x )2O3 /Ga2O3 symmetric triple quantum wells under external electric fields

doi:10.3969/j.issn.1007-5461.2026.04.013

Abstract

Abstract: A periodic β-(AlxGa1 - x )2O3 /Ga2O3 triple quantum well model is designed in this work. And then based on the finite-difference method, the intersubband transitions in the (AlxGa1 - x )2O3 /Ga2O3 symmetric triple quantum well structure are investigated under external electric field. At the same time, the electronic eigenstates and linear intersubband absorption spectra are calculated. The results show that when the external electric field is zero, the electron wave functions are mainly localized in the middle well, and the peak absorption coefficient corresponds to the 3–1 transition. As the external electric field increases, the peak absorption coefficient decreases. When an external electric field of 100 kV/cm is applied, the potential well becomes tilted, the probability of finding electrons in the left well increases, and all the energy levels shift toward higher energies. At the same time, the energy level intervals increase, the degeneracy of the lower energy levels decreases, while that of the higher energy levels increases. Furthermore, the relationships between aluminum composition, applied electric field intensity, and intersubband transitions are analyzed.

Key words: 半导体低维结构, 子带间跃迁, 有限差分法, 本征态, 对称三量子阱

CLC Number:

O472

ZHAO Yakun, HA Sihua . Intersubband transitions in β⁃(AlxGa1 - x )2O3 /Ga2O3 symmetric triple quantum wells under external electric fields[J]. Chinese Journal of Quantum Electronics, 2026, 43(4): 641-648.

References

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