Study of SiOx film grown on 4H-SiC by thermal oxidation

Abstract

Abstract:

The surface morphology of the SiOx film grown on 4H-SiC by thermal oxidation was observed by scanning electron microscope (SEM) and atomic force microscopy (AFM), respectively. The characteristics of the SiOx film and the interface of SiOx/4H-SiC were studied by X-ray photoelectron spectroscopy (XPS). The Gaussian fitting of Si2p, O1s and C1s XPS energy spectrums and the corresponding binding energy were analyzed. The composition variances of the SiOx film were also researched with XPS measurement on the different depth. The result is expected to find out the chemical composition and state of the SiOx film grown on 4H-SiC by thermal oxidation, and to obtain the characteristic of the SiOx/4H-SiC interface.

Key words: materials, SiOx film, thermal oxidation, X-ray photoelectron spectroscopy, 4H-SiC

CHEN Xia-ping，ZHU Hui-li，CAI Jia-fa. Study of SiOx film grown on 4H-SiC by thermal oxidation[J]. J4, 2010, 27(4): 479-484.

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