Ultrafast relaxation process of photoexcited charge carriers in semiconductor nanoparticles

J4 ›› 2010, Vol. 27 ›› Issue (5): 607-612.

• Semiconductor Opto-electronics • Previous Articles Next Articles

Ultrafast relaxation process of photoexcited charge carriers in semiconductor nanoparticles

HUANG Shuliang, LIANG Ruisheng, CHEN Zhenyu, LIAO Haoxiang

Laboratory of Photonic Information Technology, School for Information and Optoelectronic Science and Engineering, South China Normal University, Guangzhou 510006, China

Received:2009-10-29 Revised:2009-12-14 Published:2010-09-28 Online:2010-08-31

Abstract

Abstract:

Ultrafast relaxation process of photoexcited charge carriers in semiconductor nanoparticles is modeled with the analysis of state levels structure.　Then, several parameters, that would affect this process, are discussed. The result shows that, with the increasing of excited intensity or the decreasing of surface state density, the electron saturation of the surface state would causes the electron build-up of conduction state and leads to a longer life time; the relaxation of deep trapped electrons is the main limit of response time for nanoparticles. At last, this model is used to analyze pump-probe experiment,　showing potential use in experimental analysis.

Key words: semiconductor nanoparticle, ultrafast carrier relaxation, rate equation, pump-probe

HUANG Shuliang LIANG Ruisheng, CHEN Zhenyu LIAO Haoxiang. Ultrafast relaxation process of photoexcited charge carriers in semiconductor nanoparticles[J]. J4, 2010, 27(5): 607-612.

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Ultrafast relaxation process of photoexcited charge carriers in semiconductor nanoparticles

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