Characterization of Mo-doped ZnO thin films prepared by the sol–gel method

Abstract

Abstract:

Mo-doped ZnO (MZO) films with different Mo concentration (0~1 at%) were prepared on Al2O3 (0001) substrates by sol-gel spin coating route. It was found that the MZO films with the ZnO hexagonal wurtzite structure were highly c-axis orientation. The electrical properties of the MZO films could be significantly improved by the heat-treatment in vacuum. The resistivity of the films initially decreased with the increase of Mo content and then gradually increased with a further increase of Mo content. The lowest resistivity of 0.13 Ωcm was obtained at a Mo content of 0.4 at.%. The carrier concentration and the Hall mobility were measured and discussed to understand the electrical transport characteristics. The high average transmittance (>85%) in near-infrared region (800~2000 nm) indicates the possible use of MZO films in photoelectric device to widen absorption spectrum range.

Key words: materials, photoelectric properties, sol-gel spin coating method, Mo-doped zinc oxide, transparent conducting oxides

SHAO Jing-Zhen, DONG Wei-Wei, TAO Ru-Hua, DENG Zan-Hong, ZHOU Shu, FANG Xiao-Dong. Characterization of Mo-doped ZnO thin films prepared by the sol–gel method[J]. J4, 2011, 28(2): 247-252.

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