J4 ›› 2012, Vol. 29 ›› Issue (5): 536-541.

• Laser Tech. and Devices • Previous Articles     Next Articles

2D stochastic simulation of thermal effect about laser–silicon interaction

GONG Yan-chun WU Wen-yuan HUANG Yan-hua   

  1. Colledge of Science, PLA University of Science and Technology , Nanjing 211101, China
  • Received:2011-11-01 Revised:2011-12-26 Published:2012-09-28 Online:2012-09-02

Abstract:

The complexity of the heat exchange equation brings difficulties to study laser-damage etc. A kind of stochastic method which treats the energy input and redistribution process as a kinetics problem is used,and the thermal physical model is established. Based on stochastic method, the 2D distribution of temperature is studied by Gauss beam with 5?m radius and 647nm wave length. The relationship of the temperature with irradiated time is obtained, and the effects on distribution of temperature are discussed about the variety of reflectance, absorption coefficient, thermal capacity and thermal conductance with temperature. The results indicates that stochastic method is reasonable to treat heat exchange, and the average of reflectance and thermal capacity can be used to improve simulating efficiency under the melting point of silicon.

Key words: laser physics, laser irradiation, thermal effect, temperature distribution, stochastic simulation, silicon

CLC Number: