[1] |
LIAO Yangfang , XIE Quan .
Effect of annealing temperature on the quality and optical
properties of Mg2Si films on sapphire substrates
[J]. Chinese Journal of Quantum Electronics, 2023, 40(4): 492-499.
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[2] |
ZHANG Ruoya , ZHU Qiaofen , ZHANG Yan .
Research progress of tunable terahertz metamaterial absorbers
[J]. Chinese Journal of Quantum Electronics, 2023, 40(3): 301-318.
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[3] |
XU Jianwei , OUYANG Shoujian , DUAN Shouxin , ZOU Liner , , DENG Xiaohua , SHEN Yun, .
Terahertz planar toroidal dipole metamaterial sensor for
detecting gutter oil
[J]. Chinese Journal of Quantum Electronics, 2023, 40(3): 333-339.
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[4] |
PAN Xiaokai , JIANG Mengjie , , WANG Dong , , LYU Xuyang , , LAN Shiqi , , WEI Yingdong , , HE Yuan , , GUO Shuguang , , CHEN Pingping , WANG Lin ∗ , CHEN Xiaoshuang , LU Wei .
Application and frontier trend of infrared-terahertz
photoelectric detector
[J]. Chinese Journal of Quantum Electronics, 2023, 40(2): 217-237.
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[5] |
TONG Ye , ZHENG Yuhang , LIU Wenpeng , , DING Shoujun , ∗.
Synthesis and luminescent properties of Dy
3+ and Eu
3+
codoped NaY(MoO4)2 phosphors
[J]. Chinese Journal of Quantum Electronics, 2023, 40(1): 32-39.
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[6] |
CHEN Weidong #, ZHUO Linqing #, ZHU Wenguo , ZHENG Huadan , ZHONG Yongchun , TANG Jieyuan , , XIAO Yi , XIE Mengyuan , ZHANG Jun , YU Jianhui ∗ , CHEN Zhe , ∗.
Research progress of optical fiber integrated photodetectors
[J]. Chinese Journal of Quantum Electronics, 2022, 39(6): 942-954.
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[7] |
LIAO Yangfang, XIE Quan∗.
Effects of annealing temperature and annealing time on
structure of Mg2Si films on different substrates
[J]. Chinese Journal of Quantum Electronics, 2022, 39(4): 644-650.
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[8] |
XU Min, GONG Qiaorui, LI Shanming, HANG Yin∗.
Research progress of titanium doped sapphire laser crystal
[J]. Chinese Journal of Quantum Electronics, 2021, 38(2): 148-159.
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[9] |
CHENG Maojie, ZHANG Huili, DONG Kunpeng, QUAN Cong, HU Lunzheng, HAN Zhiyuan, SUN Dunlu, ∗.
Growth and properties of gadolinium gallium garnet crystal with
3 inches diameter
[J]. Chinese Journal of Quantum Electronics, 2021, 38(2): 160-166.
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[10] |
DOU Renqin, LUO Jianqiao, LIU Wenpeng, GAO Jinyun, WANG Xiaofei, HE Yi, CHEN Yingying, ZHANG Qingli.
Accurate determination of Yb:YAG crystal components by XRF method
[J]. Chinese Journal of Quantum Electronics, 2021, 38(2): 167-171.
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[11] |
HAN Weimin, NI Youbao∗, WU Haixin, WANG Zhenyou, HUANG Changbao.
Growth of a new long-wave infrared material PbGa6Te10
[J]. Chinese Journal of Quantum Electronics, 2021, 38(2): 172-179.
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[12] |
WANG Chao, SAI Qinglin∗, QI Hongji∗.
Research progress on photoelectric properties of Ta5+ and
Nb5+ doped -Ga2O3 single crystals
[J]. Chinese Journal of Quantum Electronics, 2021, 38(2): 219-227.
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[13] |
YANG Fan, REN Guohao.
Development of ultrafast scintillation crystals
[J]. Chinese Journal of Quantum Electronics, 2021, 38(2): 243-258.
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[14] |
WANG Qiang, DING Yuchong∗, QU Jingjing, WANG Lu, DONG Honglin, FANG Chengli, MAO Shiping.
Performance of Ce: GAGG scintillation crystals
with different thickness
[J]. Chinese Journal of Quantum Electronics, 2021, 38(2): 259-264.
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[15] |
ZHANG Zhongzheng, , ZHANG Chunhong, YAN Wanjun, QIN Xinmao, .
Influence of doping on photoelectric properties of new
two-dimensional material phosphorene
[J]. Chinese Journal of Quantum Electronics, 2021, 38(1): 108-115.
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