Research Progress in 4H-SiC-based Ultraviolet Photodetectors

Abstract

Abstract: Advances in 4H silicon carbide (4H-SiC) as a potential material for low-level ultraviolet (UV) radiation detection application at high-temperature, radiation hardened conditions are introduced. The latest progress in development of and the current state-of-art of different types of 4H-SiC-based UV photodetectors were reviewed. The approaches to improve the performances of the 4H-SiC-based photodetectors such as reducing the dark current and enhancing the photo responsivity were presented. The outlook for the development of 4H-SiC-based UV photodetectors are discussed.

Key words: optoelectronics; 4H-SiC; UV photodetector

CLC Number:

TN36

CAI Jia-fa, WU Zheng-yun. Research Progress in 4H-SiC-based Ultraviolet Photodetectors[J]. J4, 2014, 31(4): 489-501.

References

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