J4 ›› 2015, Vol. 32 ›› Issue (3): 364-370.

• Basic Optics • Previous Articles     Next Articles

Growth conditions investigation of Cu thin-films grown by CVD using kinetic monte carlo simulation

Peng Li,  Zhenxiong Yang, Hu Zhao*   

  1. Department of Physics, Beijing Normal University, Beijing 100875, china
  • Received:2014-09-23 Revised:2015-01-26 Published:2015-05-28 Online:2015-05-28

Abstract:

A new code has been developed by the method of kinetic Monte Carlo technique to investigate the three-dimensional CVD thin-film growth process. Cu atoms are randomly deposited on L×L Cu (100) lattice. The growth includes several basic processes: deposition, surface diffusion, atom detachment, atom nucleation, clusters growth and so on. Film quality is characterized by several parameters including surface entropy , roughness , flatness parameter etc. We find that lower temperature and less monolayer always come with coarse surface until it reaches the critical temperature , which is consistent with experimental result Surface entropy is a new concept that we first used by analogy with information entropy in the field of communications. We also discover that traditional description of film roughness is not appropriate. At last, we explain that it is reasonable using surface entropy to describe films over all quality.

Key words: thin films materials, kinetic Monte Carlo, growth simulation, surface roughness, surface entropy