A novel Model for SOI Waveguide Raman Lasers and Its Applications

Abstract

Abstract: An improved model is proposed to describe silicon-on-insulator (SOI) waveguide Raman lasers by considering the spontaneous Raman scattering effect. Numerical results indicate that our proposed model can well describe small-signal SOI waveguide Raman lasers and estimates the laser threshold. By using physical parameters of real SOI waveguides, we analyzed SOI waveguide Raman lasers. The results indicate the key to reach the laser thresholds in room temperature is a waveguide with large Raman coefficient, low loss, and short effective free carrier lifetime. We also proposed that by optimizing the transverse geometric size, a high overall Raman gain can be achieved in SOI waveguides with small effective mode area and short effective carrier lifetime which can increase the output power and the conversion efficiency of SOI waveguide Raman lasers.

Key words: Nonlinear optics;Raman laser; Silicon waveguide; Integrated photonics

CLC Number:

TN256

CHEN Shien, WANG Shaohao. A novel Model for SOI Waveguide Raman Lasers and Its Applications[J]. J4, 2016, 33(2): 162-169.

References

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