Abstract: The advantages of InGaN based light-emitting diodes with InGaN/GaN barriers are studied. It is found that the structure with InGaN/GaN barriers shows improved light output power, lower current leakage, and less efficiency droop over its conventional InGaN/GaN counterparts. These improvements on the electrical and the optical characteristics are mainly attributed to the alleviation of the electrostatic field in the quantum wells (QWs) when the InGaN/GaN barriers are used.

Key words: GaN based light-emitting diode, InGaN/GaN barriers, electrostatic field